FGAF40N60UFDTU

FGAF40N60UFDTU Fairchild Semiconductor


FAIRS25147-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
auf Bestellung 2512 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
122+5.95 EUR
Mindestbestellmenge: 122
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Technische Details FGAF40N60UFDTU Fairchild Semiconductor

Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A, Supplier Device Package: TO-3PF, Td (on/off) @ 25°C: 15ns/65ns, Switching Energy: 470µJ (on), 130µJ (off), Test Condition: 300V, 20A, 10Ohm, 15V, Gate Charge: 77 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 100 W.

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FGAF40N60UFDTU Hersteller : ON Semiconductor FAIRS25147-1.pdf?t.download=true&u=5oefqw
auf Bestellung 10800 Stücke:
Lieferzeit 21-28 Tag (e)
FGAF40N60UFDTU FGAF40N60UFDTU Hersteller : ON Semiconductor fgaf40n60ufd.pdf Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Tube
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FGAF40N60UFDTU Hersteller : ONSEMI FGAF40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Mounting: THT
Power dissipation: 40W
Features of semiconductor devices: integrated anti-parallel diode
Case: TO3PF
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 160A
Type of transistor: IGBT
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FGAF40N60UFDTU FGAF40N60UFDTU Hersteller : onsemi / Fairchild FGAF40N60UFD_D-2313461.pdf IGBT Transistors Ultrafast
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FGAF40N60UFDTU Hersteller : ONSEMI FGAF40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Mounting: THT
Power dissipation: 40W
Features of semiconductor devices: integrated anti-parallel diode
Case: TO3PF
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 160A
Type of transistor: IGBT
Gate charge: 150nC
Produkt ist nicht verfügbar