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FGB20N60SFD-F085

FGB20N60SFD-F085 onsemi


fgb20n60s_f085-d.pdf Hersteller: onsemi
Description: IGBT FIELD STOP 600V 40A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 111 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 10ns/90ns
Switching Energy: 310µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
Qualification: AEC-Q101
auf Bestellung 585 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.15 EUR
10+ 7.68 EUR
100+ 6.21 EUR
Mindestbestellmenge: 3
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Technische Details FGB20N60SFD-F085 onsemi

Description: IGBT FIELD STOP 600V 40A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 111 ns, Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Field Stop, Td (on/off) @ 25°C: 10ns/90ns, Switching Energy: 310µJ (on), 130µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 63 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 208 W, Qualification: AEC-Q101.

Weitere Produktangebote FGB20N60SFD-F085 nach Preis ab 5.51 EUR bis 9.2 EUR

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FGB20N60SFD-F085 FGB20N60SFD-F085 Hersteller : onsemi / Fairchild FGB20N60S_F085_D-2313334.pdf IGBT Transistors 600V 20A FSP IGBT
auf Bestellung 1600 Stücke:
Lieferzeit 245-259 Tag (e)
Anzahl Preis ohne MwSt
6+9.2 EUR
10+ 7.75 EUR
100+ 6.27 EUR
800+ 5.51 EUR
Mindestbestellmenge: 6
FGB20N60SFD-F085 FGB20N60SFD-F085 Hersteller : ON Semiconductor fgb20n60s_f085-d.pdf Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
FGB20N60SFD-F085 FGB20N60SFD-F085 Hersteller : ON Semiconductor fgb20n60s_f085-d.pdf Trans IGBT Chip N-CH 600V 40A 208W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
FGB20N60SFD-F085 FGB20N60SFD-F085 Hersteller : ON Semiconductor fgb20n60s_f085-d.pdf Trans IGBT Chip N-CH 600V 40A 208W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
FGB20N60SFD-F085 FGB20N60SFD-F085 Hersteller : onsemi fgb20n60s_f085-d.pdf Description: IGBT FIELD STOP 600V 40A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 111 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 10ns/90ns
Switching Energy: 310µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar