FGB20N60SFD-F085 onsemi
Hersteller: onsemiDescription: IGBT FIELD STOP 600V 40A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 111 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 10ns/90ns
Switching Energy: 310µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.41 EUR |
| 10+ | 4.91 EUR |
| 100+ | 3.49 EUR |
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Technische Details FGB20N60SFD-F085 onsemi
Description: IGBT FIELD STOP 600V 40A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 111 ns, Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Field Stop, Td (on/off) @ 25°C: 10ns/90ns, Switching Energy: 310µJ (on), 130µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 63 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 208 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FGB20N60SFD-F085 nach Preis ab 2.92 EUR bis 7.76 EUR
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FGB20N60SFD-F085 | Hersteller : onsemi / Fairchild |
IGBTs 600V 20A FSP IGBT |
auf Bestellung 1576 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB20N60SFD-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FGB20N60SFD-F085 - IGBT, 40 A, 2.2 V, 208 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V usEccn: EAR99 euEccn: NLR Verlustleistung: 208W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 40A SVHC: Lead (27-Jun-2024) |
auf Bestellung 1646 Stücke: Lieferzeit 14-21 Tag (e) |
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FGB20N60SFD-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FGB20N60SFD-F085 - IGBT, 40 A, 2.2 V, 208 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V usEccn: EAR99 euEccn: NLR Verlustleistung: 208W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 40A SVHC: Lead (27-Jun-2024) |
auf Bestellung 1646 Stücke: Lieferzeit 14-21 Tag (e) |
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FGB20N60SFD-F085 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FGB20N60SFD-F085 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 40A 208W 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| FGB20N60SFD-F085 | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 63nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Application: ignition systems Version: ESD Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGB20N60SFD-F085 | Hersteller : onsemi |
Description: IGBT FIELD STOP 600V 40A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 111 ns Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 10ns/90ns Switching Energy: 310µJ (on), 130µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 208 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| FGB20N60SFD-F085 | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 63nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Application: ignition systems Version: ESD Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |