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FGH40T120SMD-F155

FGH40T120SMD-F155 ON Semiconductor


fgh40t120smd-d.pdf Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
30+9.39 EUR
Mindestbestellmenge: 30
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Technische Details FGH40T120SMD-F155 ON Semiconductor

Description: IGBT TRENCH FS 1200V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/475ns, Switching Energy: 2.7mJ (on), 1.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 370 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 555 W.

Weitere Produktangebote FGH40T120SMD-F155 nach Preis ab 9.41 EUR bis 28.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FGH40T120SMD-F155 FGH40T120SMD-F155 Hersteller : ON Semiconductor fgh40t120smd-d.pdf Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
450+9.41 EUR
Mindestbestellmenge: 450
FGH40T120SMD-F155 FGH40T120SMD-F155 Hersteller : onsemi fgh40t120smd-d.pdf Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
auf Bestellung 445 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+21.19 EUR
30+ 16.93 EUR
120+ 15.14 EUR
Mindestbestellmenge: 2
FGH40T120SMD-F155 FGH40T120SMD-F155 Hersteller : onsemi / Fairchild FGH40T120SMD_D-2313554.pdf IGBT Transistors 1200V, 40A Field Stop Trench IGBT
auf Bestellung 244 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+28.52 EUR
10+ 28 EUR
100+ 26.36 EUR
250+ 15.26 EUR
450+ 13.44 EUR
900+ 11.57 EUR
Mindestbestellmenge: 2
FGH40T120SMD-F155 FGH40T120SMD-F155 Hersteller : ONSEMI 4097325.pdf Description: ONSEMI - FGH40T120SMD-F155 - IGBT, 80 A, 1.8 V, 555 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
Kollektor-Emitter-Spannung, max.: 1.2kV
rohsCompliant: YES
Verlustleistung: 555W
Anzahl der Pins: 3Pin(s)
euEccn: NLR
Kontinuierlicher Kollektorstrom: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.8V
Betriebstemperatur, max.: 175°C
usEccn: EAR99
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
FGH40T120SMD-F155 FGH40T120SMD-F155 Hersteller : ON Semiconductor fgh40t120smd-d.pdf Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
FGH40T120SMD-F155
Produktcode: 154761
fgh40t120smd-d.pdf Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
FGH40T120SMD-F155 FGH40T120SMD-F155 Hersteller : ON Semiconductor fgh40t120smd-d.pdf Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FGH40T120SMD-F155 FGH40T120SMD-F155 Hersteller : ON Semiconductor fgh40t120smd-d.pdf Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FGH40T120SMD-F155 FGH40T120SMD-F155 Hersteller : ON Semiconductor fgh40t120smd-d.pdf Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FGH40T120SMD-F155 Hersteller : ONSEMI FGH40T120SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 160A
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FGH40T120SMD-F155 Hersteller : ONSEMI FGH40T120SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 160A
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar