FGH50T65SQD-F155 onsemi
Hersteller: onsemiDescription: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/105ns
Switching Energy: 180µJ (on), 45µJ (off)
Test Condition: 400V, 12.5A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 316 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 10.53 EUR |
| 30+ | 8.36 EUR |
| 120+ | 7.16 EUR |
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Technische Details FGH50T65SQD-F155 onsemi
Description: IGBT TRENCH FS 650V 100A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/105ns, Switching Energy: 180µJ (on), 45µJ (off), Test Condition: 400V, 12.5A, 4.7Ohm, 15V, Gate Charge: 99 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGH50T65SQD-F155 nach Preis ab 5.69 EUR bis 10.61 EUR
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FGH50T65SQD-F155 | Hersteller : onsemi / Fairchild |
IGBT Transistors 650V FS4 Trench IGBT |
auf Bestellung 290 Stücke: Lieferzeit 14-28 Tag (e) |
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FGH50T65SQD-F155 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 268000mW 3-Pin(3+Tab) TO-247 Tube |
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FGH50T65SQD-F155 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH50T65SQD-F155 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH50T65SQD-F155 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 134W Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 99nC Collector-emitter voltage: 650V Kind of package: tube Collector current: 50A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH50T65SQD-F155 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 134W Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 99nC Collector-emitter voltage: 650V Kind of package: tube Collector current: 50A |
Produkt ist nicht verfügbar |