Technische Details FGH50T65SQD-F155 ON Semiconductor
Description: IGBT TRENCH FS 650V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/105ns, Switching Energy: 180µJ (on), 45µJ (off), Test Condition: 400V, 12.5A, 4.7Ohm, 15V, Gate Charge: 99 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGH50T65SQD-F155 nach Preis ab 3.65 EUR bis 9.81 EUR
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FGH50T65SQD-F155 | ON Semiconductor |
 Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH50T65SQD-F155 | ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH50T65SQD-F155 | ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 9406 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH50T65SQD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/105ns Switching Energy: 180µJ (on), 45µJ (off) Test Condition: 400V, 12.5A, 4.7Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 35009 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH50T65SQD-F155 | onsemi |
IGBTs 650V FS4 Trench IGBT |
auf Bestellung 166 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGH50T65SQD-F155 |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 450+ | 3.93 EUR |
| FGH50T65SQD-F155 |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 450+ | 3.94 EUR |
| FGH50T65SQD-F155 |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 9406 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 147+ | 4.46 EUR |
| 500+ | 4.15 EUR |
| 1000+ | 3.86 EUR |
| FGH50T65SQD-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/105ns
Switching Energy: 180µJ (on), 45µJ (off)
Test Condition: 400V, 12.5A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/105ns
Switching Energy: 180µJ (on), 45µJ (off)
Test Condition: 400V, 12.5A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 35009 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.67 EUR |
| 30+ | 5.45 EUR |
| 120+ | 4.52 EUR |
| 510+ | 3.83 EUR |
| 1020+ | 3.65 EUR |
| FGH50T65SQD-F155 |
|
Hersteller: onsemi
IGBTs 650V FS4 Trench IGBT
IGBTs 650V FS4 Trench IGBT
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.81 EUR |
| 10+ | 5.53 EUR |
| 120+ | 4.57 EUR |
| 510+ | 4.21 EUR |