Produkte > FAIRCHILD SEMICONDUCTOR > FGI40N60SFTU
FGI40N60SFTU

FGI40N60SFTU Fairchild Semiconductor

FAIRS28353-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-262 (I2PAK)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
84+8.62 EUR
Mindestbestellmenge: 84
Produktrezensionen
Produktbewertung abgeben

Technische Details FGI40N60SFTU Fairchild Semiconductor

Description: IGBT, 80A, 600V, N-CHANNEL, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A, Supplier Device Package: TO-262 (I2PAK), IGBT Type: Field Stop, Td (on/off) @ 25°C: 25ns/115ns, Switching Energy: 1.13mJ (on), 310µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 120 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 290 W.

Weitere Produktangebote FGI40N60SFTU

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FGI40N60SFTU Hersteller : onsemi / Fairchild fgi40n60sf-1192105.pdf IGBT Transistors 600V 40A Field Stop
Produkt ist nicht verfügbar