FMM22-06PF IXYS
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Mounting: THT
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Mounting: THT
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24 EUR |
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Technische Details FMM22-06PF IXYS
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A, Mounting: THT, Kind of package: tube, Gate charge: 58nC, Technology: PolarHV™, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 66A, Case: ISOPLUS i4-pac™ x024a, Semiconductor structure: double series, Reverse recovery time: 200ns, Drain-source voltage: 600V, Drain current: 12A, On-state resistance: 0.35Ω, Type of transistor: N-MOSFET x2, Power dissipation: 130W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FMM22-06PF nach Preis ab 24 EUR bis 41.01 EUR
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FMM22-06PF | Hersteller : IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A Mounting: THT Kind of package: tube Gate charge: 58nC Technology: PolarHV™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 200ns Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.35Ω Type of transistor: N-MOSFET x2 Power dissipation: 130W Polarisation: unipolar |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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FMM22-06PF | Hersteller : IXYS |
 MOSFETs PHASE LEG MOSFET MOD HALF-BRIDGE 600V 12 |
auf Bestellung 243 Stücke: Lieferzeit 10-14 Tag (e) |
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| FMM22-06PF | Hersteller : IXYS |
Description: MOSFET 2N-CH 600V 12A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 130W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active |
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