auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 38.1 EUR |
| 10+ | 31.54 EUR |
| 25+ | 30.15 EUR |
| 50+ | 29.67 EUR |
| 100+ | 29.04 EUR |
| 250+ | 27.7 EUR |
| 500+ | 26.56 EUR |
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Technische Details FMM22-06PF IXYS
Description: MOSFET 2N-CH 600V 12A I4-PAC, Packaging: Tube, Package / Case: i4-Pac™-5, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 130W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 12A, Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V, Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: ISOPLUS i4-PAC™, Part Status: Active.
Weitere Produktangebote FMM22-06PF nach Preis ab 23.97 EUR bis 37.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FMM22-06PF | Hersteller : IXYS | FMM22-06PF Multi channel transistors |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| FMM22-06PF | Hersteller : IXYS |
Description: MOSFET 2N-CH 600V 12A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 130W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active |
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