FP100R12KT4B11BOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 100A 515W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 437.09 EUR |
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Technische Details FP100R12KT4B11BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 100A 515W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 515 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V.
Weitere Produktangebote FP100R12KT4B11BOSA1 nach Preis ab 440.22 EUR bis 440.22 EUR
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FP100R12KT4B11BOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 100A 515W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 515 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
auf Bestellung 37 Stücke: Lieferzeit 21-28 Tag (e) |
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FP100R12KT4B11BOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 100A 515000mW 35-Pin ECONO3-3 Tray |
Produkt ist nicht verfügbar |
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| FP100R12KT4B11BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W Case: AG-ECONO3-3 Electrical mounting: Press-in PCB Mechanical mounting: screw Pulsed collector current: 200A Collector current: 100A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Technology: EconoPIM™ 3 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Type of module: IGBT Power dissipation: 515W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FP100R12KT4B11BOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 100A 515mW 35-Pin ECONO3-3 Tray |
Produkt ist nicht verfügbar |
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FP100R12KT4B11BOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 100A 515mW 35-Pin ECONO3-3 Tray |
Produkt ist nicht verfügbar |
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| FP100R12KT4B11BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W Case: AG-ECONO3-3 Electrical mounting: Press-in PCB Mechanical mounting: screw Pulsed collector current: 200A Collector current: 100A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Technology: EconoPIM™ 3 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Type of module: IGBT Power dissipation: 515W |
Produkt ist nicht verfügbar |