FPN660A/D75Z

FPN660A/D75Z

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Technische Details FPN660A/D75Z

Description: TRANS PNP 60V 3A TO-226, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 3A, Transistor Type: PNP, Part Status: Obsolete, Packaging: Tape & Box (TB), Supplier Device Package: TO-226, Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Frequency - Transition: 75MHz, Power - Max: 1W, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A.

Preis FPN660A/D75Z ab 0 EUR bis 0 EUR

FPN660A_D75Z
FPN660A_D75Z
Hersteller: ON Semiconductor
Description: TRANS PNP 60V 3A TO-226
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 3A
Transistor Type: PNP
Part Status: Obsolete
Packaging: Tape & Box (TB)
Supplier Device Package: TO-226
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Frequency - Transition: 75MHz
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
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