FQA13N50CF

FQA13N50CF onsemi / Fairchild


FQA13N50CF_D-1809591.pdf Hersteller: onsemi / Fairchild
MOSFET 500V N-Ch C-FET (FRFET)
auf Bestellung 627 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+6.27 EUR
10+ 5.77 EUR
25+ 5.49 EUR
100+ 4.81 EUR
450+ 4.78 EUR
Mindestbestellmenge: 9
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Technische Details FQA13N50CF onsemi / Fairchild

Description: MOSFET N-CH 500V 15A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V, Power Dissipation (Max): 218W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.

Weitere Produktangebote FQA13N50CF nach Preis ab 5.72 EUR bis 8.4 EUR

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FQA13N50CF FQA13N50CF Hersteller : onsemi fqa13n50cf-d.pdf Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 411 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.4 EUR
10+ 7.07 EUR
100+ 5.72 EUR
Mindestbestellmenge: 4
FQA13N50CF FQA13N50CF Hersteller : ONSEMI ONSM-S-A0003590676-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - FQA13N50CF - Leistungs-MOSFET, n-Kanal, 500 V, 15 A, 0.43 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 218
Gate-Source-Schwellenspannung, max.: 4
euEccn: NLR
Verlustleistung: 218
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3
Produktpalette: QFET FRFET
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.43
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.43
SVHC: Lead (17-Jan-2022)
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
FQA13N50CF fqa13n50cf-d.pdf
auf Bestellung 120 Stücke:
Lieferzeit 21-28 Tag (e)
FQA13N50CF FQA13N50CF Hersteller : ON Semiconductor fqa13n50cf-d.pdf Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA13N50CF FQA13N50CF Hersteller : onsemi fqa13n50cf-d.pdf Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
FQA13N50CF FQA13N50CF Hersteller : ONSEMI fqa13n50cf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.5A; Idm: 60A; 218W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.5A
Pulsed drain current: 60A
Power dissipation: 218W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar