auf Bestellung 627 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 6.27 EUR |
10+ | 5.77 EUR |
25+ | 5.49 EUR |
100+ | 4.81 EUR |
450+ | 4.78 EUR |
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Technische Details FQA13N50CF onsemi / Fairchild
Description: MOSFET N-CH 500V 15A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V, Power Dissipation (Max): 218W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote FQA13N50CF nach Preis ab 5.72 EUR bis 8.4 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FQA13N50CF | Hersteller : onsemi |
Description: MOSFET N-CH 500V 15A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 411 Stücke: Lieferzeit 21-28 Tag (e) |
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FQA13N50CF | Hersteller : ONSEMI |
Description: ONSEMI - FQA13N50CF - Leistungs-MOSFET, n-Kanal, 500 V, 15 A, 0.43 ohm, TO-3PN, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500 rohsCompliant: Y-EX Dauer-Drainstrom Id: 15 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 218 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 218 Bauform - Transistor: TO-3PN Anzahl der Pins: 3 Produktpalette: QFET FRFET productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.43 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.43 SVHC: Lead (17-Jan-2022) |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA13N50CF |
auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) |
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FQA13N50CF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA13N50CF | Hersteller : onsemi |
Description: MOSFET N-CH 500V 15A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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FQA13N50CF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.5A; Idm: 60A; 218W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.5A Pulsed drain current: 60A Power dissipation: 218W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |