auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 3.91 EUR |
| 25+ | 3.71 EUR |
| 100+ | 3.26 EUR |
| 450+ | 3.24 EUR |
Produktrezensionen
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Technische Details FQA13N50CF onsemi / Fairchild
Description: MOSFET N-CH 500V 15A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V, Power Dissipation (Max): 218W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote FQA13N50CF nach Preis ab 3.22 EUR bis 6.48 EUR
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FQA13N50CF | Hersteller : onsemi |
 Description: MOSFET N-CH 500V 15A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 407 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA13N50CF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA13N50CF | Hersteller : ONSEMI |
Description: ONSEMI - FQA13N50CF - Leistungs-MOSFET, n-Kanal, 500 V, 15 A, 0.43 ohm, TO-3PN, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 218W Bauform - Transistor: TO-3PN Anzahl der Pins: 3Pin(s) Produktpalette: QFET FRFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.43ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) |
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FQA13N50CF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA13N50CF | Hersteller : onsemi |
Description: MOSFET N-CH 500V 15A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |