auf Bestellung 2230 Stücke:
Lieferzeit 266-280 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.81 EUR |
| 10+ | 5.75 EUR |
| 100+ | 4.65 EUR |
| 800+ | 3.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQB34P10TM onsemi / Fairchild
Description: MOSFET P-CH 100V 33.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V, Power Dissipation (Max): 3.75W (Ta), 155W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V.
Weitere Produktangebote FQB34P10TM nach Preis ab 7.14 EUR bis 7.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FQB34P10TM | Hersteller : ON-Semicoductor |
 Transistor P-Channel MOSFET; 100V; 25V; 60mOhm; 33,5A; 155W; -55°C ~ 175°C; FQB34P10TM TFQB34p10tmAnzahl je Verpackung: 5 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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FQB34P10TM | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : onsemi |
Description: MOSFET P-CH 100V 33.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : onsemi |
Description: MOSFET P-CH 100V 33.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |