FQB34P10TM onsemi
Hersteller: onsemiDescription: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.31 EUR |
| 1600+ | 2.21 EUR |
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Technische Details FQB34P10TM onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V, Power Dissipation (Max): 3.75W (Ta), 155W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V.
Weitere Produktangebote FQB34P10TM nach Preis ab 2.29 EUR bis 7.13 EUR
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FQB34P10TM | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 458 Stücke: Lieferzeit 7-14 Tag (e) |
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FQB34P10TM | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 458 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB34P10TM | Hersteller : onsemi / Fairchild |
MOSFETs 100V P-Channel QFET |
auf Bestellung 2798 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB34P10TM | Hersteller : onsemi |
Description: MOSFET P-CH 100V 33.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V |
auf Bestellung 3300 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB34P10TM | Hersteller : ONSEMI |
Description: ONSEMI - FQB34P10TM - Leistungs-MOSFET, p-Kanal, 100 V, 33.5 A, 0.049 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 33.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 3.75W Bauform - Transistor: TO-263AB Anzahl der Pins: 2Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.049ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 615 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB34P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQB34P10TM | Hersteller : ON-Semicoductor |
Transistor P-Channel MOSFET; 100V; 25V; 60mOhm; 33,5A; 155W; -55°C ~ 175°C; FQB34P10TM TFQB34p10tm Anzahl je Verpackung: 5 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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FQB34P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB34P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |