FQB8N60CTM
FQB8N60CTM
Hersteller: onsemiDescription: MOSFET N-CH 600V 7.5A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 13 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details FQB8N60CTM
Description: MOSFET N-CH 600V 7.5A D2PAK, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V, Power Dissipation (Max): 3.13W (Ta), 147W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D²PAK (TO-263AB), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
Preis FQB8N60CTM ab 4.58 EUR bis 5.1 EUR
 Hersteller: ON Semiconductor Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
|
FQB8N60CTM Hersteller: ON Semiconductor
|
20000 Stücke |
|
|
|
FQB8N60CTM Hersteller: ONSEMI Material: FQB8N60CTM SMD N channel transistors
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
|
FQB8N60CTM Hersteller: ONSEMI Material: FQB8N60CTM SMD N channel transistors
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
 Hersteller: onsemi / Fairchild MOSFET 600V N-Channel Adv Q-FET C-Series
|
auf Bestellung 772 Stücke Lieferzeit 14-28 Tag (e) |
|
|
 Hersteller: ON Semiconductor / Fairchild MOSFET 600V N-Channel Adv Q-FET C-Series
|
auf Bestellung 448 Stücke Lieferzeit 14-28 Tag (e) |
|
|
|
FQB8N60CTM Hersteller: Rochester Electronics, LLC Description: POWER FIELD-EFFECT TRANSISTOR, 7 Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1.255pF @ 25V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Manufacturer: Fairchild Semiconductor
|
auf Bestellung 31502 Stücke Lieferzeit 21-28 Tag (e) |
|
|
|
Hersteller: onsemi Description: MOSFET N-CH 600V 7.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
 Hersteller: ON Semiconductor Description: MOSFET N-CH 600V 7.5A D2PAK Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
auf Bestellung 794 Stücke Lieferzeit 21-28 Tag (e) |
|
|