FQB8N60CTM

FQB8N60CTM

FQB8N60CTM

Hersteller: onsemi
Description: MOSFET N-CH 600V 7.5A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel

fqi8n60c-d.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 13 Stücke
Lieferzeit 21-28 Tag (e)

6+ 5.1 EUR
10+ 4.58 EUR

Technische Details FQB8N60CTM

Description: MOSFET N-CH 600V 7.5A D2PAK, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V, Power Dissipation (Max): 3.13W (Ta), 147W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D²PAK (TO-263AB), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Preis FQB8N60CTM ab 4.58 EUR bis 5.1 EUR

FQB8N60CTM
FQB8N60CTM
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R
fqi8n60c-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FQB8N60CTM
Hersteller: ON Semiconductor

fqi8n60c-d.pdf FQI8N60C-D.PDF FAIRS46430-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 FAIRS46430-1.pdf?t.download=true&u=5oefqw
20000 Stücke
FQB8N60CTM
Hersteller: ONSEMI
Material: FQB8N60CTM SMD N channel transistors
fqi8n60c-d.pdf FQI8N60C-D.PDF FAIRS46430-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 FAIRS46430-1.pdf?t.download=true&u=5oefqw
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FQB8N60CTM
Hersteller: ONSEMI
Material: FQB8N60CTM SMD N channel transistors
fqi8n60c-d.pdf FQI8N60C-D.PDF FAIRS46430-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 FAIRS46430-1.pdf?t.download=true&u=5oefqw
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FQB8N60CTM
FQB8N60CTM
Hersteller: onsemi / Fairchild
MOSFET 600V N-Channel Adv Q-FET C-Series
FQI8N60C_D-2313833.pdf
auf Bestellung 772 Stücke
Lieferzeit 14-28 Tag (e)
FQB8N60CTM
FQB8N60CTM
Hersteller: ON Semiconductor / Fairchild
MOSFET 600V N-Channel Adv Q-FET C-Series
FQI8N60C_D-2313833.pdf
auf Bestellung 448 Stücke
Lieferzeit 14-28 Tag (e)
FQB8N60CTM
Hersteller: Rochester Electronics, LLC
Description: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1.255pF @ 25V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Fairchild Semiconductor
FAIRS46430-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
auf Bestellung 31502 Stücke
Lieferzeit 21-28 Tag (e)
FQB8N60CTM
FQB8N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
fqi8n60c-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FQB8N60CTM
FQB8N60CTM
Hersteller: ON Semiconductor
Description: MOSFET N-CH 600V 7.5A D2PAK
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQI8N60C-D.PDF
auf Bestellung 794 Stücke
Lieferzeit 21-28 Tag (e)