FQB8N60CTM onsemi / Fairchild
auf Bestellung 700 Stücke:
Lieferzeit 69-73 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.66 EUR |
| 10+ | 3.31 EUR |
| 25+ | 3.15 EUR |
| 100+ | 2.73 EUR |
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Technische Details FQB8N60CTM onsemi / Fairchild
Description: MOSFET N-CH 600V 7.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V, Power Dissipation (Max): 3.13W (Ta), 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V.
Weitere Produktangebote FQB8N60CTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FQB8N60CTM | Hersteller : ON Semiconductor |
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auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB8N60CTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| FQB8N60CTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R |
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FQB8N60CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 30A Power dissipation: 147W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQB8N60CTM | Hersteller : onsemi |
Description: MOSFET N-CH 600V 7.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB8N60CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 30A Power dissipation: 147W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |