FQD12N20LTM ONSEMI
Hersteller: ONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.19 EUR |
| 106+ | 0.68 EUR |
| 119+ | 0.6 EUR |
| 138+ | 0.52 EUR |
| 146+ | 0.49 EUR |
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Technische Details FQD12N20LTM ONSEMI
Description: MOSFET N-CH 200V 9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V.
Weitere Produktangebote FQD12N20LTM nach Preis ab 0.49 EUR bis 2.08 EUR
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FQD12N20LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 254 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD12N20LTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
auf Bestellung 2278 Stücke: Lieferzeit 21-28 Tag (e) |
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FQD12N20LTM | Hersteller : onsemi / Fairchild |
MOSFET 200V N-Ch QFET Logic Level |
auf Bestellung 58009 Stücke: Lieferzeit 14-28 Tag (e) |
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FQD12N20LTM Produktcode: 126115 |
Transistoren > MOSFET N-CH |
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FQD12N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R |
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FQD12N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R |
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FQD12N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R |
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FQD12N20LTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
Produkt ist nicht verfügbar |