FQD12P10TM_F085 Fairchild Semiconductor
auf Bestellung 2353 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details FQD12P10TM_F085 Fairchild Semiconductor
Description: MOSFET P-CH 100V 9.4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FQD12P10TM_F085
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FQD12P10TM_F085 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET P-CH 100V 9.4A DPAK |
auf Bestellung 17500 Stücke: Lieferzeit 21-28 Tag (e) |
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FQD12P10TM-F085 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 9.4A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD12P10TM-F085 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Power dissipation: 50W Application: automotive industry Drain current: -6A Kind of channel: enhanced Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 0.29Ω Pulsed drain current: -37.6A Gate charge: 27nC Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FQD12P10TM-F085 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 9.4A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD12P10TM_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET P-CH 100V 9.4A DPAK |
Produkt ist nicht verfügbar |
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FQD12P10TM-F085 | Hersteller : onsemi |
Description: MOSFET P-CH 100V 9.4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FQD12P10TM-F085 | Hersteller : onsemi |
Description: MOSFET P-CH 100V 9.4A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FQD12P10TM-F085 | Hersteller : onsemi / Fairchild |
MOSFET P-CH/100V/Q-FET |
Produkt ist nicht verfügbar |
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FQD12P10TM-F085 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Power dissipation: 50W Application: automotive industry Drain current: -6A Kind of channel: enhanced Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 0.29Ω Pulsed drain current: -37.6A Gate charge: 27nC Polarisation: unipolar |
Produkt ist nicht verfügbar |