FQD2N60CTM onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
auf Bestellung 62500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.53 EUR |
5000+ | 0.49 EUR |
7500+ | 0.47 EUR |
12500+ | 0.46 EUR |
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Technische Details FQD2N60CTM onsemi
Description: MOSFET N-CH 600V 1.9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V.
Weitere Produktangebote FQD2N60CTM nach Preis ab 0.5 EUR bis 2.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FQD2N60CTM | Hersteller : onsemi / Fairchild | MOSFETs N-CH/600V/2A/A.QFET |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD2N60CTM | Hersteller : onsemi |
Description: MOSFET N-CH 600V 1.9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V |
auf Bestellung 63616 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD2N60CTM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 190000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD2N60CTM | Hersteller : Fairchild |
Transistor N-Channel MOSFET; 600V; 30V; 4,7Ohm; 1,9A; 44W; -55°C ~ 150°C; FQD2N60CTM TFQD2n60ctm Anzahl je Verpackung: 25 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD2N60CTM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD2N60CTM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD2N60CTM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD2N60CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; 44W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |