FQD2N60CTM ON Semiconductor
| Anzahl | Preis |
|---|---|
| 2500+ | 0.36 EUR |
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Technische Details FQD2N60CTM ON Semiconductor
Description: MOSFET N-CH 600V 1.9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V.
Weitere Produktangebote FQD2N60CTM nach Preis ab 0.36 EUR bis 2.11 EUR
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FQD2N60CTM | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 132500 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD2N60CTM | Hersteller : onsemi |
Description: MOSFET N-CH 600V 1.9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD2N60CTM | Hersteller : Fairchild |
Transistor N-Channel MOSFET; 600V; 30V; 4,7Ohm; 1,9A; 44W; -55°C ~ 150°C; FQD2N60CTM TFQD2n60ctm Anzahl je Verpackung: 25 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD2N60CTM | Hersteller : onsemi |
MOSFETs N-CH/600V/2A/A.QFET |
auf Bestellung 3959 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD2N60CTM | Hersteller : onsemi |
Description: MOSFET N-CH 600V 1.9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD2N60CTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FQD2N60CTM | Hersteller : Fairchild/ON Semiconductor |
N-канальний ПТ, Udss, В = 600, Id = 1,9 А, Ptot, Вт = 44, Тип монт. = smd, Ciss, пФ @ Uds, В = 235pF @ 25V, Qg, нКл = 12, Rds = 4.7 Ом, Tексп, °C = -55...150, Ugs(th) = ±30 В,... Група товару: Транзистори Корпус: DPAK Од. вим: шт Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| FQD2N60CTM | Hersteller : On Semiconductor |
N-CH 600V 1.14A DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |