FQD7N20LTM onsemi / Fairchild
auf Bestellung 1827 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.03 EUR |
| 33+ | 1.61 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.87 EUR |
| 2500+ | 0.77 EUR |
| 5000+ | 0.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD7N20LTM onsemi / Fairchild
Description: MOSFET N-CH 200V 5.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2.75A, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote FQD7N20LTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FQD7N20LTM | Hersteller : ONSEMI |
 Description: ONSEMI - FQD7N20LTM - Leistungs-MOSFET, n-Kanal, 200 V, 5.5 A, 0.59 ohm, TO-252 (DPAK), OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: QFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.59ohm |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD7N20LTM | Hersteller : ONSEMI |
Description: ONSEMI - FQD7N20LTM - Leistungs-MOSFET, n-Kanal, 200 V, 5.5 A, 0.59 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: QFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.59ohm |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD7N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD7N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD7N20LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK Type of transistor: N-MOSFET Mounting: SMD Case: DPAK On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A Drain-source voltage: 200V Drain current: 3.48A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD7N20LTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 5.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.75A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD7N20LTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 5.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.75A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD7N20LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK Type of transistor: N-MOSFET Mounting: SMD Case: DPAK On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A Drain-source voltage: 200V Drain current: 3.48A |
Produkt ist nicht verfügbar |