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FQD8P10TM

FQD8P10TM onsemi

fqu8p10-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
auf Bestellung 2130 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.87 EUR
16+ 1.63 EUR
100+ 1.13 EUR
500+ 0.94 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 14
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Technische Details FQD8P10TM onsemi

Description: MOSFET P-CH 100V 6.6A DPAK, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V.

Weitere Produktangebote FQD8P10TM nach Preis ab 0.72 EUR bis 1.91 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FQD8P10TM FQD8P10TM Hersteller : onsemi / Fairchild FQU8P10_D-2314064.pdf MOSFET 100V P-Channel QFET
auf Bestellung 44983 Stücke:
Lieferzeit 342-356 Tag (e)
Anzahl Preis ohne MwSt
28+1.91 EUR
32+ 1.66 EUR
100+ 1.15 EUR
500+ 0.96 EUR
1000+ 0.82 EUR
2500+ 0.73 EUR
5000+ 0.72 EUR
Mindestbestellmenge: 28
FQD8P10TM Hersteller : ON-Semicoductor fqu8p10-d.pdf P-MOSFET 6.6A 100V 44W 0.53Ω FQD8P10TM TFQD8p10tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+1.16 EUR
Mindestbestellmenge: 30
FQD8P10TM Hersteller : ONSEMI fqu8p10-d.pdf FQD8P10TM SMD P channel transistors
Produkt ist nicht verfügbar
FQD8P10TM FQD8P10TM Hersteller : onsemi fqu8p10-d.pdf Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Produkt ist nicht verfügbar