FQP3N90 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 900V 3.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 22834 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 468+ | 1.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQP3N90 Fairchild Semiconductor
Description: MOSFET N-CH 900V 3.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V.
Weitere Produktangebote FQP3N90
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
FQP3N90 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
|
 |
FQP3N90 | Hersteller : onsemi |
Description: MOSFET N-CH 900V 3.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
FQP3N90 | Hersteller : onsemi / Fairchild |
MOSFET 900V N-Channel QFET |
Produkt ist nicht verfügbar |