FQP5N60C

FQP5N60C ON Semiconductor


fqpf5n60ccn-d.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2000+1.07 EUR
3000+ 1.02 EUR
Mindestbestellmenge: 2000
Produktrezensionen
Produktbewertung abgeben

Technische Details FQP5N60C ON Semiconductor

Description: MOSFET N-CH 600V 4.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.

Weitere Produktangebote FQP5N60C nach Preis ab 1.17 EUR bis 3.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FQP5N60C FQP5N60C Hersteller : Fairchild Semiconductor FAIRS46444-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 4
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 75282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
417+1.17 EUR
Mindestbestellmenge: 417
FQP5N60C Hersteller : Fairchild fqpf5n60c-d.pdf FAIRS46444-1.pdf?t.download=true&u=5oefqw N-MOSFET 600V 4.5A 2.5Ω 100W FQP5N60C FAI TFQP5n60c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+3.26 EUR
Mindestbestellmenge: 10
FQP5N60C FQP5N60C Hersteller : ON Semiconductor fqpf5n60ccn-d.pdf Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP5N60C FQP5N60C Hersteller : onsemi fqpf5n60c-d.pdf Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
FQP5N60C FQP5N60C Hersteller : onsemi / Fairchild FQPF5N60C_D-2313715.pdf MOSFET 600V N-Ch Q-FET advance C-Series
Produkt ist nicht verfügbar