FQP6N40C Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
auf Bestellung 15675 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
469+ | 1.54 EUR |
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Technische Details FQP6N40C Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V, Power Dissipation (Max): 73W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V.
Weitere Produktangebote FQP6N40C nach Preis ab 2.34 EUR bis 3.98 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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FQP6N40C | Hersteller : onsemi / Fairchild | MOSFET 400V N-Ch Q-FET advance C-Series |
auf Bestellung 958 Stücke: Lieferzeit 14-28 Tag (e) |
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FQP6N40C | Hersteller : ONSEMI |
Description: ONSEMI - FQP6N40C - Leistungs-MOSFET, n-Kanal, 400 V, 6 A, 0.83 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 400 Dauer-Drainstrom Id: 6 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 73 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: QFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.83 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: Lead (17-Jan-2022) |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP6N40C | Hersteller : FAIRCHILD | TO-220 |
auf Bestellung 1629 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP6N40C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP6N40C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.6A; Idm: 24A; 73W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.6A Pulsed drain current: 24A Power dissipation: 73W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP6N40C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.6A; Idm: 24A; 73W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.6A Pulsed drain current: 24A Power dissipation: 73W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |