FQPF19N20 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 200V 11.8A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 200V 11.8A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 15905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
281+ | 1.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQPF19N20 Fairchild Semiconductor
Description: MOSFET N-CH 200V 11.8A TO220F, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.
Weitere Produktangebote FQPF19N20 nach Preis ab 1.69 EUR bis 3.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FQPF19N20 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 11.8A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 10107 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
FQPF19N20 | Hersteller : onsemi / Fairchild | MOSFET 200V N-Channel QFET |
auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
FQPF19N20 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 11.8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
||||||||||||
FQPF19N20 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 7.5A Pulsed drain current: 48A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
FQPF19N20 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 11.8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
||||||||||||
FQPF19N20 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 7.5A Pulsed drain current: 48A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |