FQPF8N80CYDTU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 8A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 800V 8A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
249+ | 1.91 EUR |
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Technische Details FQPF8N80CYDTU Fairchild Semiconductor
Description: MOSFET N-CH 800V 8A TO220F-3, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V, Power Dissipation (Max): 59W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V.
Weitere Produktangebote FQPF8N80CYDTU nach Preis ab 1.51 EUR bis 3.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FQPF8N80CYDTU | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Tube |
auf Bestellung 363 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF8N80CYDTU | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Tube |
auf Bestellung 363 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF8N80CYDTU | Hersteller : onsemi |
Description: MOSFET N-CH 800V 8A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF8N80CYDTU | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Tube |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF8N80CYDTU | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Tube |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF8N80CYDTU | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Tube |
Produkt ist nicht verfügbar |
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FQPF8N80CYDTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 59W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 59W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQPF8N80CYDTU | Hersteller : onsemi |
Description: MOSFET N-CH 800V 8A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQPF8N80CYDTU | Hersteller : onsemi / Fairchild | MOSFET HIGH VOLTAGE |
Produkt ist nicht verfügbar |
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FQPF8N80CYDTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 59W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 59W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |