auf Bestellung 12 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.41 EUR |
| 17+ | 3.09 EUR |
| 100+ | 2.4 EUR |
| 500+ | 1.98 EUR |
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Technische Details FQS4900TF onsemi / Fairchild
Description: MOSFET N/P-CH 60V 1.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, 300V, Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA, Rds On (Max) @ Id, Vgs: 550mOhm @ 650mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V, Vgs(th) (Max) @ Id: 1.95V @ 20mA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FQS4900TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQS4900TF | Hersteller : onsemi |
Description: MOSFET N/P-CH 60V 1.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V, 300V Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA Rds On (Max) @ Id, Vgs: 550mOhm @ 650mA, 10V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs(th) (Max) @ Id: 1.95V @ 20mA Supplier Device Package: 8-SOIC |
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