| Anzahl | Preis |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQS4900TF onsemi / Fairchild
Description: MOSFET N/P-CH 60V/300V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, 300V, Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA, Rds On (Max) @ Id, Vgs: 550mOhm @ 650mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V, Vgs(th) (Max) @ Id: 1.95V @ 20mA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FQS4900TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FQS4900TF | ONS/FAI | MOSFET N/P-CH DUAL 60V 8SOP Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
FQS4900TF | onsemi |
Description: MOSFET N/P-CH 60V/300V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V, 300V Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA Rds On (Max) @ Id, Vgs: 550mOhm @ 650mA, 10V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs(th) (Max) @ Id: 1.95V @ 20mA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FQS4900TF |
Hersteller: ONS/FAI
MOSFET N/P-CH DUAL 60V 8SOP Транзистори
MOSFET N/P-CH DUAL 60V 8SOP Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQS4900TF |
Hersteller: onsemi
Description: MOSFET N/P-CH 60V/300V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V, 300V
Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA
Rds On (Max) @ Id, Vgs: 550mOhm @ 650mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
Vgs(th) (Max) @ Id: 1.95V @ 20mA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 60V/300V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V, 300V
Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA
Rds On (Max) @ Id, Vgs: 550mOhm @ 650mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
Vgs(th) (Max) @ Id: 1.95V @ 20mA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH