auf Bestellung 1990 Stücke:
Lieferzeit 686-690 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.85 EUR |
| 10+ | 2.55 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQS4901TF onsemi / Fairchild
Description: MOSFET 2N-CH 400V 450MA 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 400V, Current - Continuous Drain (Id) @ 25°C: 450mA, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V, Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FQS4901TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FQS4901TF | Hersteller : ONSEMI |
 Description: ONSEMI - FQS4901TF - Dual-MOSFET, n-Kanal, 400 V, 450 mA, 3.2 ohm, SOP, OberflächenmontageTransistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 400 Dauer-Drainstrom Id: 450 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2 Bauform - Transistor: SOP Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 3.2 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (17-Jan-2022) |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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FQS4901TF | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.45A Power dissipation: 2W Case: SO8 Gate-source voltage: ±25V On-state resistance: 4.2Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQS4901TF | Hersteller : onsemi |
Description: MOSFET 2N-CH 400V 450MA 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 450mA Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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FQS4901TF | Hersteller : onsemi |
Description: MOSFET 2N-CH 400V 450MA 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 450mA Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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FQS4901TF | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.45A Power dissipation: 2W Case: SO8 Gate-source voltage: ±25V On-state resistance: 4.2Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |