FQT1N80TF-WS onsemi
Hersteller: onsemi
Description: MOSFET N-CH 800V 200MA SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Description: MOSFET N-CH 800V 200MA SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.6 EUR |
Produktrezensionen
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Technische Details FQT1N80TF-WS onsemi
Description: ONSEMI - FQT1N80TF-WS - Leistungs-MOSFET, n-Kanal, 800 V, 200 mA, 15.5 ohm, SOT-223, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 800V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 200mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 2.1W, Bauform - Transistor: SOT-223, Anzahl der Pins: 3Pins, Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 15.5ohm, SVHC: Lead (23-Jan-2024).
Weitere Produktangebote FQT1N80TF-WS nach Preis ab 0.62 EUR bis 2.36 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FQT1N80TF-WS | Hersteller : onsemi / Fairchild | MOSFETs 800V 0.2A 20Ohm N-Channel |
auf Bestellung 124016 Stücke: Lieferzeit 10-14 Tag (e) |
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FQT1N80TF-WS | Hersteller : onsemi |
Description: MOSFET N-CH 800V 200MA SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
auf Bestellung 7850 Stücke: Lieferzeit 10-14 Tag (e) |
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FQT1N80TF-WS | Hersteller : ONSEMI |
Description: ONSEMI - FQT1N80TF-WS - Leistungs-MOSFET, n-Kanal, 800 V, 200 mA, 15.5 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: Y-EX Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 2.1W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 15.5ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 3960 Stücke: Lieferzeit 14-21 Tag (e) |
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FQT1N80TF-WS | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FQT1N80TF-WS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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FQT1N80TF-WS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |