FQT1N80TF-WS onsemi

Description: MOSFET N-CH 800V 200MA SOT223-3, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.1W (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-3, Packaging: Tape & Reel (TR).