FQU3N40TU

FQU3N40TU Fairchild Semiconductor


FAIRS18449-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 400V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
auf Bestellung 2887 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
523+1.35 EUR
Mindestbestellmenge: 523
Produktrezensionen
Produktbewertung abgeben

Technische Details FQU3N40TU Fairchild Semiconductor

Description: MOSFET N-CH 400V 2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V.

Weitere Produktangebote FQU3N40TU

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FQU3N40TU FAIRS18449-1.pdf?t.download=true&u=5oefqw
auf Bestellung 4597 Stücke:
Lieferzeit 21-28 Tag (e)