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FS200R12KT4RB11BOSA1

FS200R12KT4RB11BOSA1 Infineon Technologies


Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 11 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+646.33 EUR
10+ 605.36 EUR
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Technische Details FS200R12KT4RB11BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 280A 1000W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 280 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1000 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.

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FS200R12KT4RB11BOSA1 FS200R12KT4RB11BOSA1 Hersteller : Infineon Technologies 48ds_fs200r12kt4r_b11_2_1.pdffolderiddb3a304412b407950112b4095af601.pdf Trans IGBT Module N-CH 1200V 280A 1000000mW 35-Pin ECONO3-4 Tray
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FS200R12KT4RB11BOSA1 Hersteller : INFINEON TECHNOLOGIES Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 1kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FS200R12KT4RB11BOSA1 Hersteller : INFINEON TECHNOLOGIES Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 1kW
Produkt ist nicht verfügbar