FS200R12KT4RB11BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 280A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 215.42 EUR |
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Technische Details FS200R12KT4RB11BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 280 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1000 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
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FS200R12KT4RB11BOSA1 | Hersteller : Infineon Technologies |
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FS200R12KT4RB11BOSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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FS200R12KT4RB11BOSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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FS200R12KT4RB11BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FS200R12KT4RB11BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |