FS75R17KE3BOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 130A 465W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 465 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Description: IGBT MOD 1700V 130A 465W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 465 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 452.43 EUR |
Produktrezensionen
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Technische Details FS75R17KE3BOSA1 Infineon Technologies
Description: IGBT MOD 1700V 130A 465W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 130 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 465 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V.
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FS75R17KE3BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 465W Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
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FS75R17KE3BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 465W Mechanical mounting: screw |
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