GA16JT17-247 GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: TRANS SJT 1700V 16A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
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Technische Details GA16JT17-247 GeneSiC Semiconductor
Description: TRANS SJT 1700V 16A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, Power Dissipation (Max): 282W (Tc), Supplier Device Package: TO-247AB, Drain to Source Voltage (Vdss): 1700 V.