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M3P75A-100 M3P75A-100 m3p75a80_thru_m3p75a160.pdf GeneSiC Semiconductor Description: DIODE STD REC 1000V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1000V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-120 M3P75A-120 m3p75a80_thru_m3p75a160.pdf GeneSiC Semiconductor Description: DIODE STD REC 1200V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1200V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-140 M3P75A-140 m3p75a80_thru_m3p75a160.pdf GeneSiC Semiconductor Description: DIODE STD REC 1400V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1400V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-160 M3P75A-160 m3p75a80_thru_m3p75a160.pdf GeneSiC Semiconductor Description: DIODE STD REC 1600V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-60 M3P75A-60 threephase.pdf GeneSiC Semiconductor Description: DIODE STD REC 600V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-80 M3P75A-80 m3p75a80_thru_m3p75a160.pdf GeneSiC Semiconductor Description: DIODE STD REC 800V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 800V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-100 threephase.pdf GeneSiC Semiconductor Description: DIODE STD REC 1000V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1000V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-120 threephase.pdf GeneSiC Semiconductor Description: DIODE STD REC 1200V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-140 threephase.pdf GeneSiC Semiconductor Description: DIODE STD REC 1400V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-160 m3p100a80_thru_m3p100a160.pdf GeneSiC Semiconductor Description: DIODE STD REC 1600V 100A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-60 threephase.pdf GeneSiC Semiconductor Description: DIODE STD REC 600V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-80 m3p100a80_thru_m3p100a160.pdf GeneSiC Semiconductor Description: DIODE STD REC 800V 100A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 800V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CTS MBR40045CTS mbr40045cts.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 400A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 36V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Screw Mount
Package / Case: SOT-227-4
Supplier Device Package: SOT-227
auf Bestellung 51 Stücke
Lieferzeit 21-28 Tag (e)
MBRH12040 MBRH12040 mbrh12020r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 120A D-67
Package / Case: D-67
Current - Reverse Leakage @ Vr: 4mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRH12040R MBRH12040R mbrh12020r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 120A D-67
Package / Case: D-67 HALF-PAK
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Current - Average Rectified (Io): 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
auf Bestellung 45 Stücke
Lieferzeit 21-28 Tag (e)
1+ 177.32 EUR
10+ 151.74 EUR
25+ 148.37 EUR
MBRH20045 MBRH20045 mbrh120100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 200A D-67
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Supplier Device Package: D-67
Current - Average Rectified (Io): 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: D-67
Packaging: Bulk
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
MBRH20045R MBRH20045R mbrh120100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 200A D-67
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Package / Case: D-67
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky, Reverse Polarity
Part Status: Active
Packaging: Bulk
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
MBR200100CTS MBR200100CTS MBR200100CTS.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A SOT227
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Screw Mount
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Package / Case: SOT-227-4
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SOT-227
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 200A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT200100 MBRT200100 mbrt200100.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 3TOWER
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Manufacturer: GeneSiC Semiconductor
auf Bestellung 26 Stücke
Lieferzeit 21-28 Tag (e)
MBR400100CT MBR400100CT mbr400100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Package / Case: Twin Tower
Packaging: Bulk
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 320 Stücke - Preis und Lieferfrist anzeigen
MBR400100CTR MBR400100CTR mbr400100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 2TOWER
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
MBR40035CTR MBR40035CTR mbr40020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 200A 2TOWER
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
MBR40035CT MBR40035CT mbr40020ct_thru_mbr40040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20030CT MBR20030CT mbr20020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 594 Stücke - Preis und Lieferfrist anzeigen
MBR20030CTR MBR20030CTR mbr20020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 200A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12035 CTR MBR12035 CTR mbr12020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
MBR12040CT MBR12040CT mbr12020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 120A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBR12040
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12040CTR MBR12040CTR mbr12020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12060CT MBR12060CT mbr120100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12045CTR MBR12045CTR mbr120100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 120A 2TOWER
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
1+ 191.96 EUR
MBR12060CTR MBR12060CTR mbr120100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 60V 120A 2TOWER
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12020CT MBR12020CT mbr12020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12020
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12020CTR MBR12020CTR mbr12020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 20V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12020
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12030CT MBR12030CT mbr12020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12030
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12030CTR MBR12030CTR mbr12020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 30V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12030
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12035CT MBR12035CT mbr12020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12035
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12045CT MBR12045CT mbr120100ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 120A 2TOWER
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBR12045
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
FST16035 FST16035 fst16020.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 160A TO249AB
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 160A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB
auf Bestellung 33 Stücke
Lieferzeit 21-28 Tag (e)
MBR30035CT MBR30035CT mbr30020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 200A 2TOWER
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30035CTR MBR30035CTR mbr30020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 300A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
1+ 271.93 EUR
MBRT20035R MBRT20035R mbrt20020.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20040R MBRT20040R mbrt20020_thru_mbrt20040r.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20035 MBRT20035 mbrt20020.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20040 MBRT20040 mbrt20020.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 200A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
MBRT400100R MBRT400100R mbrt400100.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30035 MBRT30035 mbrt30020.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Average Rectified (Io) (per Diode): 150A
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
1+ 305.68 EUR
MBRT30035R MBRT30035R mbrt30020.pdf GeneSiC Semiconductor Description: DIODE MODULE 35V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
auf Bestellung 16 Stücke
Lieferzeit 21-28 Tag (e)
1+ 305.68 EUR
MBRT30040 MBRT30040 mbrt30020.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 300A 3TOWER
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30045R MBRT30045R mbrt300100.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBRT30045
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30040R MBRT30040R mbrt30020.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 300A 3TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 15 Stücke
Lieferzeit 21-28 Tag (e)
1+ 305.68 EUR
MBRT30045 MBRT30045 mbrt300100.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40040CTR MBR40040CTR mbr40020ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 200A 2TOWER
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Package / Case: Twin Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
auf Bestellung 17 Stücke
Lieferzeit 21-28 Tag (e)
MBR40040CT MBR40040CT mbr40020ct_thru_mbr40040ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20010CT MUR20010CT mur20005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8100 Stücke - Preis und Lieferfrist anzeigen
MUR20010CTR MUR20010CTR mur20005ct.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 200A 2TOWER
Part Status: Active
Packaging: Bulk
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT400100 MBRT400100 mbrt400100.pdf GeneSiC Semiconductor Description: DIODE MODULE 100V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Three Tower
auf Bestellung 14 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
MBRT40045R MBRT40045R mbrt400100.pdf GeneSiC Semiconductor Description: DIODE MODULE 45V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40040R MURT40040R murt40040.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 400A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 180ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
MURT40040 MURT40040 murt40040.pdf GeneSiC Semiconductor Description: DIODE MODULE 400V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR60040CTR MBR60040CTR mbr60020ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 300A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
auf Bestellung 12 Stücke
Lieferzeit 21-28 Tag (e)
MBR60040CT MBR60040CT mbr60020ctr.pdf GeneSiC Semiconductor Description: DIODE MODULE 40V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
GB100XCP12-227 GB100XCP12-227 GB100XCP12-227.pdf GeneSiC Semiconductor Description: IGBT MODULE 1200V 100A SOT227
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: PT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA10SICP12-247 GA10SICP12-247 GA10SICP12-247.pdf GeneSiC Semiconductor Description: SIC CO-PACK SJT/RECT 10A 1.2KV
Package / Case: TO-247-3
Voltage: 1200V
Current: 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA20SICP12-263 GA20SICP12-263 GA20SICP12-263.pdf GeneSiC Semiconductor Description: SIC CO-PACK SJT/RECT 20A 1.2KV
Voltage: 1.2 kV
Current: 20 A
Part Status: Active
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
1+ 139.15 EUR
GA50SICP12-227 GA50SICP12-227 GA50SICP12-227.pdf GeneSiC Semiconductor Description: SIC CO-PACK SJT/RECT 50A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Part Status: Obsolete
Current: 50 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA100SICP12-227 GA100SICP12-227 GA100SICP12-227.pdf GeneSiC Semiconductor Description: SIC CO-PACK SJT/RECT 100A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Part Status: Obsolete
Current: 100 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA100SCPL12-227E GeneSiC Semiconductor Description: SIC PHASE LEG BRIDGE 100A 1.2KV Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBPC5001W GBPC5001W gbpc50005t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 100V 50A GBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 78 Stücke - Preis und Lieferfrist anzeigen
GBPC50005W GBPC50005W gbpc50005t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 50V 50A GBPC-W
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 50 V
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28 Stücke - Preis und Lieferfrist anzeigen
W01M W01M W005M~W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 100V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6756 Stücke - Preis und Lieferfrist anzeigen
W04M W005M~W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7046 Stücke - Preis und Lieferfrist anzeigen
W06M W06M-10M.pdf техническая информация GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15193 Stücke - Preis und Lieferfrist anzeigen
W10M W06M-10M.pdf техническая информация GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-Circular, WOM
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15312 Stücke - Preis und Lieferfrist anzeigen
DB101G db101g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 50V 1A DB
Voltage - Peak Reverse (Max): 50V
Technology: Standard
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB102G db101g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 100V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB103G DB103G db101g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 200V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
auf Bestellung 7372 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.59 EUR
13+ 2.11 EUR
25+ 1.71 EUR
100+ 1.24 EUR
250+ 1 EUR
500+ 0.86 EUR
1000+ 0.73 EUR
2500+ 0.59 EUR
DB104G db101g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 72500 Stücke - Preis und Lieferfrist anzeigen
DB105G db105g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 600V 1A DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: DB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 149 Stücke - Preis und Lieferfrist anzeigen
DB106G db105g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 800V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 490 Stücke - Preis und Lieferfrist anzeigen
W005M w005m_thru_w04m.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 50V 1.5A WOM
Supplier Device Package: WOM
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB151G db151g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 50V 1.5A DB
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Base Part Number: DB151
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - Peak Reverse (Max): 50V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB152G db151g_thru_db154g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 100V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB153G db151g_thru_db154g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 200V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB154G db151g_thru_db154g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 400V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB155G db155g_thru_db157g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 600V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
DB156G db155g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 800V 1.5A DB
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB157G db155g.pdf техническая информация GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2W005M 2W005M-2W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 50V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2W01M 2W005M-2W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 100V 2A WOM
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2W04M 2W005M-2W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 400V 2A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Voltage - Peak Reverse (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10377 Stücke - Preis und Lieferfrist anzeigen
2W06M 2W005M-2W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8742 Stücke - Preis und Lieferfrist anzeigen
2W10M 2W005M-2W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Package / Case: 4-Circular, WOM
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 930 Stücke - Preis und Lieferfrist anzeigen
KBPM2005G kbpm2005g_thru_kbpm204g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 50V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM201G kbpm2005g_thru_kbpm204g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 100V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM202G kbpm2005g_thru_kbpm204g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 200V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM204G kbpm2005g_thru_kbpm204g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 400V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM206G kbpm206g_thru_kbpm210g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 600V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM208G kbpm206g_thru_kbpm210g.pdf GeneSiC Semiconductor Description: DIODE BRIDGE 800V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 800V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM210G KBPM206G~KBPM210G.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1kV
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBP201 KBP201~204.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 900 Stücke - Preis und Lieferfrist anzeigen
M3P75A-100 m3p75a80_thru_m3p75a160.pdf
M3P75A-100
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1000V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1000V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-120 m3p75a80_thru_m3p75a160.pdf
M3P75A-120
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1200V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1200V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-140 m3p75a80_thru_m3p75a160.pdf
M3P75A-140
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1400V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1400V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-160 m3p75a80_thru_m3p75a160.pdf
M3P75A-160
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1600V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-60 threephase.pdf
M3P75A-60
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 600V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P75A-80 m3p75a80_thru_m3p75a160.pdf
M3P75A-80
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 800V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 800V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-100 threephase.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1000V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1000V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-120 threephase.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1200V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-140 threephase.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1400V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-160 m3p100a80_thru_m3p100a160.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1600V 100A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-60 threephase.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 600V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M3P100A-80 m3p100a80_thru_m3p100a160.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 800V 100A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 800V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CTS mbr40045cts.pdf
MBR40045CTS
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 36V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Screw Mount
Package / Case: SOT-227-4
Supplier Device Package: SOT-227
auf Bestellung 51 Stücke
Lieferzeit 21-28 Tag (e)
MBRH12040 mbrh12020r.pdf
MBRH12040
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 120A D-67
Package / Case: D-67
Current - Reverse Leakage @ Vr: 4mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRH12040R mbrh12020r.pdf
MBRH12040R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 120A D-67
Package / Case: D-67 HALF-PAK
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Current - Average Rectified (Io): 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
auf Bestellung 45 Stücke
Lieferzeit 21-28 Tag (e)
1+ 177.32 EUR
10+ 151.74 EUR
25+ 148.37 EUR
MBRH20045 mbrh120100r.pdf
MBRH20045
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A D-67
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Supplier Device Package: D-67
Current - Average Rectified (Io): 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: D-67
Packaging: Bulk
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
MBRH20045R mbrh120100r.pdf
MBRH20045R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A D-67
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Package / Case: D-67
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky, Reverse Polarity
Part Status: Active
Packaging: Bulk
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
MBR200100CTS MBR200100CTS.pdf
MBR200100CTS
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A SOT227
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Screw Mount
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Package / Case: SOT-227-4
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SOT-227
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 200A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT200100 mbrt200100.pdf
MBRT200100
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 3TOWER
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Manufacturer: GeneSiC Semiconductor
auf Bestellung 26 Stücke
Lieferzeit 21-28 Tag (e)
MBR400100CT mbr400100ct.pdf
MBR400100CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Package / Case: Twin Tower
Packaging: Bulk
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 320 Stücke - Preis und Lieferfrist anzeigen
MBR400100CTR mbr400100ct.pdf
MBR400100CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
MBR40035CTR mbr40020ct.pdf
MBR40035CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 200A 2TOWER
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
MBR40035CT mbr40020ct_thru_mbr40040ctr.pdf
MBR40035CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20030CT mbr20020ct.pdf
MBR20030CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 594 Stücke - Preis und Lieferfrist anzeigen
MBR20030CTR mbr20020ct.pdf
MBR20030CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 200A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12035 CTR mbr12020ct.pdf
MBR12035 CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
MBR12040CT mbr12020ct.pdf
MBR12040CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 120A 2TOWER
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBR12040
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12040CTR mbr12020ct.pdf
MBR12040CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12060CT mbr120100ct.pdf
MBR12060CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12045CTR mbr120100ct.pdf
MBR12045CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 120A 2TOWER
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
1+ 191.96 EUR
MBR12060CTR mbr120100ct.pdf
MBR12060CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 120A 2TOWER
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12020CT mbr12020ct.pdf
MBR12020CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12020
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12020CTR mbr12020ct.pdf
MBR12020CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12020
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12030CT mbr12020ct.pdf
MBR12030CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12030
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12030CTR mbr12020ct.pdf
MBR12030CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12030
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12035CT mbr12020ct.pdf
MBR12035CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 120A 2TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Base Part Number: MBR12035
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR12045CT mbr120100ct.pdf
MBR12045CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 120A 2TOWER
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBR12045
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
FST16035 fst16020.pdf
FST16035
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 160A TO249AB
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 160A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB
auf Bestellung 33 Stücke
Lieferzeit 21-28 Tag (e)
MBR30035CT mbr30020ct.pdf
MBR30035CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 200A 2TOWER
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30035CTR mbr30020ct.pdf
MBR30035CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
1+ 271.93 EUR
MBRT20035R mbrt20020.pdf
MBRT20035R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20040R mbrt20020_thru_mbrt20040r.pdf
MBRT20040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20035 mbrt20020.pdf
MBRT20035
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT20040 mbrt20020.pdf
MBRT20040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
MBRT400100R mbrt400100.pdf
MBRT400100R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30035 mbrt30020.pdf
MBRT30035
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Average Rectified (Io) (per Diode): 150A
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
1+ 305.68 EUR
MBRT30035R mbrt30020.pdf
MBRT30035R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
auf Bestellung 16 Stücke
Lieferzeit 21-28 Tag (e)
1+ 305.68 EUR
MBRT30040 mbrt30020.pdf
MBRT30040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 3TOWER
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30045R mbrt300100.pdf
MBRT30045R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBRT30045
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30040R mbrt30020.pdf
MBRT30040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 3TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 15 Stücke
Lieferzeit 21-28 Tag (e)
1+ 305.68 EUR
MBRT30045 mbrt300100.pdf
MBRT30045
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40040CTR mbr40020ct.pdf
MBR40040CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 2TOWER
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Package / Case: Twin Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
auf Bestellung 17 Stücke
Lieferzeit 21-28 Tag (e)
MBR40040CT mbr40020ct_thru_mbr40040ctr.pdf
MBR40040CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR20010CT mur20005ct.pdf
MUR20010CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8100 Stücke - Preis und Lieferfrist anzeigen
MUR20010CTR mur20005ct.pdf
MUR20010CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Part Status: Active
Packaging: Bulk
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT400100 mbrt400100.pdf
MBRT400100
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Three Tower
auf Bestellung 14 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
MBRT40045R mbrt400100.pdf
MBRT40045R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURT40040R murt40040.pdf
MURT40040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 180ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
MURT40040 murt40040.pdf
MURT40040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR60040CTR mbr60020ctr.pdf
MBR60040CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
auf Bestellung 12 Stücke
Lieferzeit 21-28 Tag (e)
MBR60040CT mbr60020ctr.pdf
MBR60040CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
GB100XCP12-227 GB100XCP12-227.pdf
GB100XCP12-227
Hersteller: GeneSiC Semiconductor
Description: IGBT MODULE 1200V 100A SOT227
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: PT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA10SICP12-247 GA10SICP12-247.pdf
GA10SICP12-247
Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 10A 1.2KV
Package / Case: TO-247-3
Voltage: 1200V
Current: 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA20SICP12-263 GA20SICP12-263.pdf
GA20SICP12-263
Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 20A 1.2KV
Voltage: 1.2 kV
Current: 20 A
Part Status: Active
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
1+ 139.15 EUR
GA50SICP12-227 GA50SICP12-227.pdf
GA50SICP12-227
Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 50A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Part Status: Obsolete
Current: 50 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA100SICP12-227 GA100SICP12-227.pdf
GA100SICP12-227
Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 100A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Part Status: Obsolete
Current: 100 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA100SCPL12-227E
Hersteller: GeneSiC Semiconductor
Description: SIC PHASE LEG BRIDGE 100A 1.2KV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBPC5001W gbpc50005t.pdf
GBPC5001W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 50A GBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 78 Stücke - Preis und Lieferfrist anzeigen
GBPC50005W gbpc50005t.pdf
GBPC50005W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A GBPC-W
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 50 V
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28 Stücke - Preis und Lieferfrist anzeigen
W01M W005M~W10M.pdf
W01M
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6756 Stücke - Preis und Lieferfrist anzeigen
W04M W005M~W10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7046 Stücke - Preis und Lieferfrist anzeigen
W06M техническая информация W06M-10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15193 Stücke - Preis und Lieferfrist anzeigen
W10M техническая информация W06M-10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-Circular, WOM
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15312 Stücke - Preis und Lieferfrist anzeigen
DB101G db101g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1A DB
Voltage - Peak Reverse (Max): 50V
Technology: Standard
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB102G db101g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB103G db101g.pdf
DB103G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
auf Bestellung 7372 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.59 EUR
13+ 2.11 EUR
25+ 1.71 EUR
100+ 1.24 EUR
250+ 1 EUR
500+ 0.86 EUR
1000+ 0.73 EUR
2500+ 0.59 EUR
DB104G db101g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 72500 Stücke - Preis und Lieferfrist anzeigen
DB105G db105g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1A DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: DB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 149 Stücke - Preis und Lieferfrist anzeigen
DB106G db105g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 490 Stücke - Preis und Lieferfrist anzeigen
W005M w005m_thru_w04m.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 50V 1.5A WOM
Supplier Device Package: WOM
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB151G db151g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1.5A DB
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Base Part Number: DB151
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - Peak Reverse (Max): 50V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB152G db151g_thru_db154g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB153G db151g_thru_db154g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB154G db151g_thru_db154g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB155G db155g_thru_db157g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
DB156G db155g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1.5A DB
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DB157G техническая информация db155g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2W005M 2W005M-2W10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2W01M 2W005M-2W10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 2A WOM
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2W04M 2W005M-2W10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Voltage - Peak Reverse (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10377 Stücke - Preis und Lieferfrist anzeigen
2W06M 2W005M-2W10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8742 Stücke - Preis und Lieferfrist anzeigen
2W10M 2W005M-2W10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Package / Case: 4-Circular, WOM
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 930 Stücke - Preis und Lieferfrist anzeigen
KBPM2005G kbpm2005g_thru_kbpm204g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 50V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM201G kbpm2005g_thru_kbpm204g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM202G kbpm2005g_thru_kbpm204g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM204G kbpm2005g_thru_kbpm204g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM206G kbpm206g_thru_kbpm210g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM208G kbpm206g_thru_kbpm210g.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 800V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPM210G KBPM206G~KBPM210G.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1kV
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBP201 KBP201~204.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 900 Stücke - Preis und Lieferfrist anzeigen
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