Die Produkte genesic semiconductor
Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung |
Informationen zu Lagerverfügbarkeit und Lieferzeiten |
Preis ohne MwSt |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
M3P75A-100 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 1000V 75A 3PH Supplier Device Package: 5-SMD Package / Case: 5-SMD Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 75A Voltage - Peak Reverse (Max): 1000V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
M3P75A-120 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 1200V 75A 3PH Supplier Device Package: 5-SMD Package / Case: 5-SMD Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 75A Voltage - Peak Reverse (Max): 1200V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
M3P75A-140 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 1400V 75A 3PH Supplier Device Package: 5-SMD Package / Case: 5-SMD Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 75A Voltage - Peak Reverse (Max): 1400V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
M3P75A-160 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 1600V 75A 3PH Supplier Device Package: 5-SMD Package / Case: 5-SMD Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 75A Voltage - Peak Reverse (Max): 1600V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
M3P75A-60 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 600V 75A 3PH Supplier Device Package: 5-SMD Package / Case: 5-SMD Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 75A Voltage - Peak Reverse (Max): 600V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
M3P75A-80 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 800V 75A 3PH Supplier Device Package: 5-SMD Package / Case: 5-SMD Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 75A Voltage - Peak Reverse (Max): 800V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
M3P100A-100 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 1000V 100A 3PH Supplier Device Package: Module Package / Case: Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 100A Voltage - Peak Reverse (Max): 1000V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
M3P100A-120 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 1200V 100A 3PH Supplier Device Package: Module Package / Case: Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 100A Voltage - Peak Reverse (Max): 1200V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
M3P100A-140 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 1400V 100A 3PH Supplier Device Package: Module Package / Case: Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 100A Voltage - Peak Reverse (Max): 1400V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
M3P100A-160 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 1600V 100A 3PH Supplier Device Package: 5-SMD Package / Case: 5-SMD Module Mounting Type: Surface Mount Current - DC Forward (If) (Max): 100A Voltage - Peak Reverse (Max): 1600V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
M3P100A-60 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 600V 100A 3PH Supplier Device Package: Module Package / Case: Module Mounting Type: Chassis Mount Current - DC Forward (If) (Max): 100A Voltage - Peak Reverse (Max): 600V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
M3P100A-80 |
![]() |
GeneSiC Semiconductor |
Description: DIODE STD REC 800V 100A 3PH Supplier Device Package: 5-SMD Package / Case: 5-SMD Module Mounting Type: Surface Mount Current - DC Forward (If) (Max): 100A Voltage - Peak Reverse (Max): 800V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
![]() |
MBR40045CTS |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 45V 400A SOT227 Packaging: Bulk Part Status: Obsolete Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5µA @ 36V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Screw Mount Package / Case: SOT-227-4 Supplier Device Package: SOT-227 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 51 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRH12040 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 120A D-67 Package / Case: D-67 Current - Reverse Leakage @ Vr: 4mA @ 20V Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 120A Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Part Status: Active Packaging: Bulk Manufacturer: GeneSiC Semiconductor |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRH12040R |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 120A D-67 Current - Reverse Leakage @ Vr: 1 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: D-67 Current - Average Rectified (Io): 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky, Reverse Polarity Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 45 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRH20045 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 200A D-67 Current - Reverse Leakage @ Vr: 5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Supplier Device Package: D-67 Current - Average Rectified (Io): 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: D-67 Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 4 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRH20045R |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 200A D-67 Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 45V Speed: Fast Recovery =< 500ns, > 200mA (Io) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: D-67 Package / Case: D-67 Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A Current - Average Rectified (Io): 200A Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky, Reverse Polarity Part Status: Active Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 40 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR200100CTS |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A SOT227 Current - Reverse Leakage @ Vr: 10 µA @ 80 V Diode Configuration: 2 Independent Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Screw Mount Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A Package / Case: SOT-227-4 Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: SOT-227 Packaging: Tube Current - Average Rectified (Io) (per Diode): 200A (DC) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRT200100 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A 3TOWER Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 16 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR400100CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A 2TOWER Current - Reverse Leakage @ Vr: 5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 7 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR400100CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A 2TOWER Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky, Reverse Polarity Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Anode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
|
MBR40035CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 200A 2TOWER Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky, Reverse Polarity Mounting Type: Chassis Mount |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR40035CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 400A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 35V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 35V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR20030CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 30V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR20030CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 30V 200A 2TOWER Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A (DC) Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12035 CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 120A 2TOWER Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 36 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR12040CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 120A 2TOWER Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12040CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 120A 2TOWER Packaging: Bulk Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12060CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 60V 120A 2TOWER Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12045CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 45V 120A 2TOWER Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky, Reverse Polarity Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 18 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR12060CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 60V 120A 2TOWER Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Diode Type: Schottky Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12020CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 20V 120A 2TOWER Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12020CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 20V 120A 2TOWER Packaging: Bulk Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12030CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 30V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12030CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 30V 120A 2TOWER Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12035CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR12045CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 45V 120A 2TOWER Package / Case: Twin Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 3 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 120A (DC) Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
FST16035 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 160A TO249AB Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 160A Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 33 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR30035CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 200A 2TOWER Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A Current - Reverse Leakage @ Vr: 8 mA @ 20 V Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR30035CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 300A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Schottky, Reverse Polarity Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 21 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRT20035R |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRT20040R |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 200A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky, Reverse Polarity |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRT20035 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRT20040 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 200A 3TOWER Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 7 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRT400100R |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 3TOWER Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky, Reverse Polarity Part Status: Active Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRT30035 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 300A 3TOWER Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 150A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Three Tower Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Packaging: Bulk Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 5 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRT30035R |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 35V 300A 3TOWER Current - Average Rectified (Io) (per Diode): 150A Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky, Reverse Polarity Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 16 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRT30040 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 300A 3TOWER Part Status: Active Packaging: Bulk Manufacturer: GeneSiC Semiconductor Supplier Device Package: Three Tower Package / Case: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRT30045R |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 45V 300A 3TOWER Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Diode Configuration: 1 Pair Common Anode Part Status: Active Packaging: Bulk Manufacturer: GeneSiC Semiconductor Base Part Number: MBRT30045 Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRT30040R |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 300A 3TOWER Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 150A Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky, Reverse Polarity Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 15 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRT30045 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 45V 300A 3TOWER Manufacturer: GeneSiC Semiconductor Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 1mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Supplier Device Package: Three Tower Package / Case: Three Tower Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR40040CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 200A 2TOWER Current - Reverse Leakage @ Vr: 5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 200A Mounting Type: Chassis Mount Package / Case: Twin Tower Packaging: Bulk Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Anode Diode Type: Schottky |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 17 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR40040CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 400A 2TOWER Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 5mA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MUR20010CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MUR20010CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 100V 200A 2TOWER Part Status: Active Packaging: Bulk Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBRT400100 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 3TOWER Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Packaging: Bulk Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 14 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBRT40045R |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 45V 400A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 400A (DC) Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MURT40040R |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 400V 400A 3TOWER Current - Reverse Leakage @ Vr: 25µA @ 50V Reverse Recovery Time (trr): 180ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard, Reverse Polarity Diode Configuration: 1 Pair Common Anode Part Status: Active Supplier Device Package: Three Tower Package / Case: Three Tower Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 150°C Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MURT40040 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 400V 400A 3TOWER Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
MBR60040CTR |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 300A 2TOWER Operating Temperature - Junction: -55°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Supplier Device Package: Twin Tower Current - Average Rectified (Io) (per Diode): 300A Diode Configuration: 1 Pair Common Anode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: Twin Tower Current - Reverse Leakage @ Vr: 1 mA @ 20 V Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 12 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
MBR60040CT |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE 40V 300A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
GB100XCP12-227 |
![]() |
GeneSiC Semiconductor |
Description: IGBT MODULE 1200V 100A SOT227 Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4 Packaging: Bulk Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Part Status: Obsolete IGBT Type: PT Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Operating Temperature: -40°C ~ 175°C (TJ) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
GA10SICP12-247 |
![]() |
GeneSiC Semiconductor |
Description: SIC CO-PACK SJT/RECT 10A 1.2KV Package / Case: TO-247-3 Voltage: 1200V Current: 10A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
GA20SICP12-263 |
![]() |
GeneSiC Semiconductor |
Description: SIC CO-PACK SJT/RECT 20A 1.2KV Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Tube Voltage: 1.2 kV Current: 20 A Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 40 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
![]() |
GA50SICP12-227 |
![]() |
GeneSiC Semiconductor |
Description: SIC CO-PACK SJT/RECT 50A 1.2KV Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Part Status: Obsolete Current: 50 A Voltage: 1.2 kV |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
GA100SICP12-227 |
![]() |
GeneSiC Semiconductor |
Description: SIC CO-PACK SJT/RECT 100A 1.2KV Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Part Status: Obsolete Current: 100 A Voltage: 1.2 kV |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
GA100SCPL12-227E | GeneSiC Semiconductor | Description: SIC PHASE LEG BRIDGE 100A 1.2KV |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||||
![]() |
GBPC5001W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 50A GBPC-W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 50 A Voltage - Peak Reverse (Max): 100 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
![]() |
GBPC50005W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 50A GBPC-W Voltage - Peak Reverse (Max): 50 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 50 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
|
W01M |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 1.5A WOM Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 100 V Part Status: Obsolete Supplier Device Package: WOM Technology: Standard Operating Temperature: -65°C ~ 125°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Circular, WOM Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||||
W04M |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 1.5A WOM Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 400 V Part Status: Obsolete Supplier Device Package: WOM Technology: Standard Operating Temperature: -65°C ~ 125°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Circular, WOM Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
W06M |
![]() ![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 1.5A WOM Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Supplier Device Package: WOM Technology: Standard Operating Temperature: -65°C ~ 125°C (TJ) Diode Type: Single Phase Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
W10M |
![]() ![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 1.5A WOM Packaging: Bulk Supplier Device Package: WOM Technology: Standard Operating Temperature: -65°C ~ 125°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Circular, WOM Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 1 kV Part Status: Obsolete Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB101G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 1A DB Voltage - Peak Reverse (Max): 50V Technology: Standard Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 50V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Average Rectified (Io): 1A Diode Type: Single Phase Part Status: Active Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB102G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 1A DB Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 100 V Part Status: Active Supplier Device Package: DB Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
|
DB103G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 1A DB Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: DB Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 7370 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
DB104G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 1A DB Part Status: Active Supplier Device Package: DB Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 400 V Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB105G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 1A DB Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Current - Average Rectified (Io): 1 A Package / Case: 4-EDIP (0.321", 8.15mm) Packaging: Bulk Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: DB Technology: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB106G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 1A DB Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: DB Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
W005M |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 50V 1.5A WOM Supplier Device Package: WOM Package / Case: 4-Circular, WOM Mounting Type: Through Hole Current - DC Forward (If) (Max): 1.5A Voltage - Peak Reverse (Max): 50V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB151G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 1.5A DB Technology: Standard Diode Type: Single Phase Part Status: Active Packaging: Bulk Base Part Number: DB151 Manufacturer: GeneSiC Semiconductor Supplier Device Package: DB Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 50V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Average Rectified (Io): 1.5A Voltage - Peak Reverse (Max): 50V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB152G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 100V 1.5A DB Supplier Device Package: DB Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Current - DC Forward (If) (Max): 1.5A Voltage - Peak Reverse (Max): 100V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB153G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 200V 1.5A DB Supplier Device Package: DB Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Current - DC Forward (If) (Max): 1.5A Voltage - Peak Reverse (Max): 200V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB154G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 400V 1.5A DB Supplier Device Package: DB Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Current - DC Forward (If) (Max): 1.5A Voltage - Peak Reverse (Max): 400V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB155G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 1.5A DB Supplier Device Package: DB Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Current - DC Forward (If) (Max): 1.5A Voltage - Peak Reverse (Max): 600V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB156G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 1.5A DB Current - Reverse Leakage @ Vr: 5 µA @ 800 V Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
DB157G |
![]() ![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 1.5A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
2W005M |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 2A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
2W01M |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 2A WOM Supplier Device Package: WOM Technology: Standard Operating Temperature: -65°C ~ 125°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Circular, WOM Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 100 V Part Status: Obsolete |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
2W04M |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 2A WOM Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Part Status: Obsolete Supplier Device Package: WOM Technology: Standard Operating Temperature: -65°C ~ 125°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Circular, WOM Packaging: Bulk Voltage - Peak Reverse (Max): 400 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
2W06M |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 2A WOM Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Supplier Device Package: WOM Technology: Standard Operating Temperature: -65°C ~ 125°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Circular, WOM Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
2W10M |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A WOM Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 1 kV Part Status: Obsolete Supplier Device Package: WOM Technology: Standard Operating Temperature: -65°C ~ 125°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Package / Case: 4-Circular, WOM Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
KBPM2005G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 50V 2A KBPM Supplier Device Package: KBPM Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Current - DC Forward (If) (Max): 2A Voltage - Peak Reverse (Max): 50V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
KBPM201G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 100V 2A KBPM Supplier Device Package: KBPM Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Current - DC Forward (If) (Max): 2A Voltage - Peak Reverse (Max): 100V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
KBPM202G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 200V 2A KBPM Supplier Device Package: KBPM Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Current - DC Forward (If) (Max): 2A Voltage - Peak Reverse (Max): 200V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
KBPM204G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 400V 2A KBPM Supplier Device Package: KBPM Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Current - DC Forward (If) (Max): 2A Voltage - Peak Reverse (Max): 400V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
KBPM206G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 2A KBPM Supplier Device Package: KBPM Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Current - DC Forward (If) (Max): 2A Voltage - Peak Reverse (Max): 600V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
KBPM208G |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 800V 2A KBPM Supplier Device Package: KBPM Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Current - DC Forward (If) (Max): 2A Voltage - Peak Reverse (Max): 800V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
KBPM210G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM Manufacturer: GeneSiC Semiconductor Packaging: Bulk Part Status: Obsolete Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1kV Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||||||
KBP201 |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 2A KBP Packaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
M3P75A-100 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1000V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1000V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 1000V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1000V
Diode Type: Three Phase
M3P75A-120 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1200V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1200V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 1200V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1200V
Diode Type: Three Phase
M3P75A-140 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1400V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1400V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 1400V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1400V
Diode Type: Three Phase
M3P75A-160 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1600V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 1600V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 1600V
Diode Type: Three Phase
M3P75A-60 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 600V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 600V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 600V
Diode Type: Three Phase
M3P75A-80 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 800V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 800V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 800V 75A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 800V
Diode Type: Three Phase
M3P100A-100 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1000V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1000V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 1000V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1000V
Diode Type: Single Phase
M3P100A-120 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1200V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 1200V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1200V
Diode Type: Single Phase
M3P100A-140 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1400V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 1400V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1400V
Diode Type: Single Phase
M3P100A-160 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 1600V 100A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1600V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 1600V 100A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 1600V
Diode Type: Three Phase
M3P100A-60 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 600V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 600V 100A 3PH
Supplier Device Package: Module
Package / Case: Module
Mounting Type: Chassis Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
M3P100A-80 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE STD REC 800V 100A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 800V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE STD REC 800V 100A 3PH
Supplier Device Package: 5-SMD
Package / Case: 5-SMD Module
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 100A
Voltage - Peak Reverse (Max): 800V
Diode Type: Three Phase
MBR40045CTS |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 36V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Screw Mount
Package / Case: SOT-227-4
Supplier Device Package: SOT-227
auf Bestellung 51 Stücke Description: DIODE MODULE 45V 400A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 36V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Screw Mount
Package / Case: SOT-227-4
Supplier Device Package: SOT-227

Lieferzeit 21-28 Tag (e)
MBRH12040 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 120A D-67
Package / Case: D-67
Current - Reverse Leakage @ Vr: 4mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 120A D-67
Package / Case: D-67
Current - Reverse Leakage @ Vr: 4mA @ 20V
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
MBRH12040R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 120A D-67
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Current - Average Rectified (Io): 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Packaging: Bulk
auf Bestellung 45 Stücke Description: DIODE SCHOTTKY 40V 120A D-67
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Current - Average Rectified (Io): 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
|
MBRH20045 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A D-67
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Supplier Device Package: D-67
Current - Average Rectified (Io): 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: D-67
Packaging: Bulk
auf Bestellung 4 Stücke Description: DIODE SCHOTTKY 45V 200A D-67
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Supplier Device Package: D-67
Current - Average Rectified (Io): 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: D-67
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
MBRH20045R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A D-67
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Package / Case: D-67
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky, Reverse Polarity
Part Status: Active
Packaging: Bulk
auf Bestellung 40 Stücke Description: DIODE SCHOTTKY 45V 200A D-67
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Package / Case: D-67
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky, Reverse Polarity
Part Status: Active
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
MBR200100CTS |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A SOT227
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Screw Mount
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Package / Case: SOT-227-4
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SOT-227
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 200A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 200A SOT227
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Screw Mount
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Package / Case: SOT-227-4
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SOT-227
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 200A (DC)
MBRT200100 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
auf Bestellung 16 Stücke Description: DIODE MODULE 100V 200A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
|
MBR400100CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
auf Bestellung 7 Stücke Description: DIODE MODULE 100V 200A 2TOWER
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
auf Bestellung 320 Stücke - Preis und Lieferfrist anzeigen
|
MBR400100CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
auf Bestellung 1 Stücke Description: DIODE MODULE 100V 200A 2TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode

Lieferzeit 21-28 Tag (e)
|
MBR40035CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 200A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
auf Bestellung 1 Stücke Description: DIODE MODULE 35V 200A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount

Lieferzeit 21-28 Tag (e)
|
MBR40035CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
MBR20030CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
auf Bestellung 594 Stücke - Preis und Lieferfrist anzeigen
MBR20030CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 200A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 30V 200A 2TOWER
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
MBR12035 CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
auf Bestellung 36 Stücke Description: DIODE MODULE 35V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
|
MBR12040CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 120A 2TOWER
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 120A 2TOWER
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
MBR12040CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 120A 2TOWER
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 120A 2TOWER
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
MBR12060CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 60V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
MBR12045CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
auf Bestellung 18 Stücke Description: DIODE MODULE 45V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
|
MBR12060CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 60V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Diode Type: Schottky
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 60V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Diode Type: Schottky
Package / Case: Twin Tower
Packaging: Bulk
MBR12020CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 120A 2TOWER
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 20V 120A 2TOWER
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
MBR12020CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 20V 120A 2TOWER
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 20V 120A 2TOWER
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
MBR12030CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 30V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
MBR12030CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 30V 120A 2TOWER
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 30V 120A 2TOWER
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
MBR12035CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
MBR12045CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 120A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 120A 2TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
FST16035 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 160A TO249AB
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 160A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB
auf Bestellung 33 Stücke Description: DIODE MODULE 35V 160A TO249AB
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 160A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

Lieferzeit 21-28 Tag (e)
MBR30035CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 200A 2TOWER
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 200A 2TOWER
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
MBR30035CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
auf Bestellung 21 Stücke Description: DIODE MODULE 35V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V

Lieferzeit 21-28 Tag (e)
|
MBRT20035R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
MBRT20040R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky, Reverse Polarity
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 200A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky, Reverse Polarity
MBRT20035 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
MBRT20040 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
auf Bestellung 7 Stücke Description: DIODE MODULE 40V 200A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

Lieferzeit 21-28 Tag (e)
MBRT400100R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky, Reverse Polarity
Part Status: Active
Packaging: Bulk
MBRT30035 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 3TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Three Tower
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 5 Stücke Description: DIODE MODULE 35V 300A 3TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Three Tower
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C

Lieferzeit 21-28 Tag (e)
|
MBRT30035R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 3TOWER
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
auf Bestellung 16 Stücke Description: DIODE MODULE 35V 300A 3TOWER
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower

Lieferzeit 21-28 Tag (e)
|
MBRT30040 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 3TOWER
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 300A 3TOWER
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
MBRT30045R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBRT30045
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MBRT30045
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
MBRT30040R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 3TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
auf Bestellung 15 Stücke Description: DIODE MODULE 40V 300A 3TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky, Reverse Polarity
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active

Lieferzeit 21-28 Tag (e)
|
MBRT30045 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Package / Case: Three Tower
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
MBR40040CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 2TOWER
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
auf Bestellung 17 Stücke Description: DIODE MODULE 40V 200A 2TOWER
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 200A
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky

Lieferzeit 21-28 Tag (e)
|
MBR40040CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 400A 2TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
MUR20010CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 8100 Stücke - Preis und Lieferfrist anzeigen
MUR20010CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 200A 2TOWER
Part Status: Active
Packaging: Bulk
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 200A 2TOWER
Part Status: Active
Packaging: Bulk
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
MBRT400100 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Three Tower
auf Bestellung 14 Stücke Description: DIODE MODULE 100V 400A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Three Tower

Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
MBRT40045R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
MURT40040R |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 180ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
auf Bestellung 1 Stücke Description: DIODE MODULE 400V 400A 3TOWER
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 180ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
MURT40040 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 400A 3TOWER
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
MBR60040CTR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Packaging: Bulk
auf Bestellung 12 Stücke Description: DIODE MODULE 40V 300A 2TOWER
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
|
MBR60040CT |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 40V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
GB100XCP12-227 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: IGBT MODULE 1200V 100A SOT227
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: PT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MODULE 1200V 100A SOT227
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 8.55 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: PT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
GA10SICP12-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 10A 1.2KV
Package / Case: TO-247-3
Voltage: 1200V
Current: 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SIC CO-PACK SJT/RECT 10A 1.2KV
Package / Case: TO-247-3
Voltage: 1200V
Current: 10A
GA20SICP12-263 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 20A 1.2KV
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Voltage: 1.2 kV
Current: 20 A
Part Status: Active
auf Bestellung 40 Stücke Description: SIC CO-PACK SJT/RECT 20A 1.2KV
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Voltage: 1.2 kV
Current: 20 A
Part Status: Active

Lieferzeit 21-28 Tag (e)
|
GA50SICP12-227 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 50A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Part Status: Obsolete
Current: 50 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SIC CO-PACK SJT/RECT 50A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Part Status: Obsolete
Current: 50 A
Voltage: 1.2 kV
GA100SICP12-227 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 100A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Part Status: Obsolete
Current: 100 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SIC CO-PACK SJT/RECT 100A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Part Status: Obsolete
Current: 100 A
Voltage: 1.2 kV
GA100SCPL12-227E |
Hersteller: GeneSiC Semiconductor
Description: SIC PHASE LEG BRIDGE 100A 1.2KV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SIC PHASE LEG BRIDGE 100A 1.2KV
GBPC5001W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 50A GBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 100V 50A GBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 78 Stücke - Preis und Lieferfrist anzeigen
GBPC50005W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A GBPC-W
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 50V 50A GBPC-W
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
auf Bestellung 28 Stücke - Preis und Lieferfrist anzeigen
W01M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 100V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
auf Bestellung 2686 Stücke - Preis und Lieferfrist anzeigen
W04M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 400V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
W06M | ![]() |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
auf Bestellung 16265 Stücke - Preis und Lieferfrist anzeigen
W10M | ![]() |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1.5A WOM
Packaging: Bulk
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1KV 1.5A WOM
Packaging: Bulk
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1198 Stücke - Preis und Lieferfrist anzeigen
DB101G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1A DB
Voltage - Peak Reverse (Max): 50V
Technology: Standard
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 50V 1A DB
Voltage - Peak Reverse (Max): 50V
Technology: Standard
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
DB102G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 100V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
DB103G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
auf Bestellung 7370 Stücke Description: BRIDGE RECT 1PHASE 200V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)

Lieferzeit 21-28 Tag (e)
|
DB104G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1A DB
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 400 V
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 400V 1A DB
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 400 V
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
auf Bestellung 72500 Stücke - Preis und Lieferfrist anzeigen
DB105G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Average Rectified (Io): 1 A
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 1A DB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Average Rectified (Io): 1 A
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
auf Bestellung 149 Stücke - Preis und Lieferfrist anzeigen
DB106G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1A DB
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 1A DB
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: DB
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
auf Bestellung 490 Stücke - Preis und Lieferfrist anzeigen
W005M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 50V 1.5A WOM
Supplier Device Package: WOM
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 50V 1.5A WOM
Supplier Device Package: WOM
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
DB151G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1.5A DB
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Base Part Number: DB151
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - Peak Reverse (Max): 50V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 50V 1.5A DB
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Base Part Number: DB151
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - Peak Reverse (Max): 50V
DB152G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 100V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
DB153G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 200V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
DB154G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 400V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
DB155G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 600V 1.5A DB
Supplier Device Package: DB
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 1.5A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
DB156G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1.5A DB
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 1.5A DB
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
DB157G | ![]() |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1KV 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
2W005M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 50V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
2W01M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 2A WOM
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 100V 2A WOM
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
2W04M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Voltage - Peak Reverse (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 400V 2A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Voltage - Peak Reverse (Max): 400 V
auf Bestellung 10377 Stücke - Preis und Lieferfrist anzeigen
2W06M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 2A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
auf Bestellung 8742 Stücke - Preis und Lieferfrist anzeigen
2W10M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1KV 2A WOM
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Package / Case: 4-Circular, WOM
Packaging: Bulk
auf Bestellung 692 Stücke - Preis und Lieferfrist anzeigen
KBPM2005G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 50V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 50V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
KBPM201G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 100V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
KBPM202G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 200V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
KBPM204G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 400V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
KBPM206G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 600V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 600V
Diode Type: Single Phase
KBPM208G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 800V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 800V 2A KBPM
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 2A
Voltage - Peak Reverse (Max): 800V
Diode Type: Single Phase
KBPM210G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1kV
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1KV 2A KBPM
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1kV
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM
KBP201 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 900 Stücke - Preis und Lieferfrist anzeigen