Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5554) > Seite 3 nach 93
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GB02SLT12-214 | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1200V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 21699 Stücke: Lieferzeit 10-14 Tag (e) |
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| GA05JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GA10JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GA02JT33-SMB | GeneSiC Semiconductor | Description: TRANS SJT 3.3KV 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GA05JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GA10JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GA02JT33-SMB | GeneSiC Semiconductor | Description: TRANS SJT 3.3KV 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GB02SLT06-214 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 650V 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GB01SLT12-214 | GeneSiC Semiconductor |
Description: DIODE SIL CARBIDE 1.2KV 1A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 61pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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GB02SLT12-214 | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GA05JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GA10JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GA02JT33-SMB | GeneSiC Semiconductor | Description: TRANS SJT 3.3KV 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GB50SLT12-247 | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 50A TO247-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GB04SLT17-247 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 1700V 4A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GB08SLT17-247 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 1700V 8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| GB16SLT17-247 | GeneSiC Semiconductor | Description: SIC SCHOTTKY DIODE 1700V 16A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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GAP3SLT33-220FP | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 3.3KV 300MA TO220 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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GA05JT12-263 | GeneSiC Semiconductor |
Description: TRANS SJT 1200V 15A D2PAK Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Power Dissipation (Max): 106W (Tc) Supplier Device Package: TO-263-7 Drain to Source Voltage (Vdss): 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA05JT12-247 | GeneSiC Semiconductor |
Description: TRANS SJT 1200V 5A TO247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 800V Current Drain (Id) - Max: 15 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1.2 kV Power - Max: 106 W Resistance - RDS(On): 180 MOhms Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA10JT12-263 | GeneSiC Semiconductor |
Description: TRANS SJT 1200V 25A Packaging: Tube Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 10A Power Dissipation (Max): 170W (Tc) Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA10JT12-247 | GeneSiC Semiconductor |
Description: TRANS SJT 1200V 10A TO247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V Current Drain (Id) - Max: 25 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1.2 kV Power - Max: 170 W Resistance - RDS(On): 100 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA20JT12-247 | GeneSiC Semiconductor |
Description: TRANS SJT 1200V 20A TO247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 800V Current Drain (Id) - Max: 45 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1.2 kV Power - Max: 282 W Resistance - RDS(On): 50 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 1 µA @ 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA20JT12-263 | GeneSiC Semiconductor |
Description: TRANS SJT 1200V 45A D2PAK Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 20A Power Dissipation (Max): 282W (Tc) Supplier Device Package: TO-263-7 Part Status: Active Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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GA50JT12-247 | GeneSiC Semiconductor |
Description: TRANS SJT 1200V 100A TO247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 800V Current Drain (Id) - Max: 100 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1.2 kV Power - Max: 583 W Resistance - RDS(On): 20 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 10 µA @ 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA10SICP12-247 | GeneSiC Semiconductor |
Description: SIC CO-PACK SJT/RECT 10A 1.2KV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Current: 10 A Voltage: 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA20SICP12-263 | GeneSiC Semiconductor |
Description: SIC CO-PACK SJT/RECT 20A 1.2KV Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Part Status: Active Current: 20 A Voltage: 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA50SICP12-227 | GeneSiC Semiconductor |
Description: SIC CO-PACK SJT/RECT 50A 1.2KV Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Current: 50 A Voltage: 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GA100SICP12-227 | GeneSiC Semiconductor |
Description: SIC CO-PACK SJT/RECT 100A 1.2KV Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Current: 100 A Voltage: 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GA100SCPL12-227E | GeneSiC Semiconductor | Description: SIC PHASE LEG BRIDGE 100A 1.2KV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 150K100A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 150A DO205 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 150K20A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 150A DO205AA Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A Current - Reverse Leakage @ Vr: 35 mA @ 200 V |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| 150K40A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 150A DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 150K60A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 150A DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 150K80A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 150A DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 150KR100A | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1KV DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 150KR20A | GeneSiC Semiconductor |
Description: DIODE GEN REV 200V 150A DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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150KR40A | GeneSiC Semiconductor |
Description: DIODE GEN REV 400V 150A DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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150KR60A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 150A DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 150KR80A | GeneSiC Semiconductor |
Description: DIODE GP REV 800V 150A DO205AA Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150A Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A Current - Reverse Leakage @ Vr: 32 mA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N1183 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 35A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N1183AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N1183R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N1186 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 35A DO5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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1N1186R | GeneSiC Semiconductor |
Description: DIODE STANDARD REV 200V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 1N1188AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N1189R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N1202AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 12A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N2128A | GeneSiC Semiconductor |
Description: DIODE STANDARD 50V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N2129A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N2129AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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1N2131AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 1N2133AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 300V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N2135A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N2135AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N2137A | GeneSiC Semiconductor |
Description: DIODE GEN PURP 500V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N2137AR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 500V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N3208 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N3208R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 1N3209 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 15A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GB02SLT12-214 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARB 1200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 21699 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.86 EUR |
| 10+ | 4.33 EUR |
| 25+ | 4.13 EUR |
| 100+ | 3.85 EUR |
| 250+ | 3.71 EUR |
| GA05JT12-SMB3L |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 5A
Description: TRANS SJT 1.2KV 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA10JT12-SMB3L |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 10A
Description: TRANS SJT 1.2KV 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA02JT33-SMB |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 3.3KV 2A
Description: TRANS SJT 3.3KV 2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA05JT12-SMB3L |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 5A
Description: TRANS SJT 1.2KV 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA10JT12-SMB3L |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 10A
Description: TRANS SJT 1.2KV 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA02JT33-SMB |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 3.3KV 2A
Description: TRANS SJT 3.3KV 2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GB02SLT06-214 |
Hersteller: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 650V 2A
Description: SIC SCHOTTKY DIODE 650V 2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GB01SLT12-214 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 61pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 61pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.52 EUR |
| 6000+ | 2.43 EUR |
| GB02SLT12-214 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARB 1200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 3.27 EUR |
| GA05JT12-SMB3L |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 5A
Description: TRANS SJT 1.2KV 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA10JT12-SMB3L |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 10A
Description: TRANS SJT 1.2KV 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA02JT33-SMB |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 3.3KV 2A
Description: TRANS SJT 3.3KV 2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GB50SLT12-247 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 50A TO247-2
Description: DIODE SIL CARB 1.2KV 50A TO247-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GB04SLT17-247 |
Hersteller: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1700V 4A
Description: SIC SCHOTTKY DIODE 1700V 4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GB08SLT17-247 |
Hersteller: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1700V 8A
Description: SIC SCHOTTKY DIODE 1700V 8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GB16SLT17-247 |
Hersteller: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1700V 16A
Description: SIC SCHOTTKY DIODE 1700V 16A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GAP3SLT33-220FP |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 3.3KV 300MA TO220
Description: DIODE SCHOTTKY 3.3KV 300MA TO220
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 20.86 EUR |
| GA05JT12-263 |
|
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-263-7
Drain to Source Voltage (Vdss): 1200 V
Description: TRANS SJT 1200V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-263-7
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA05JT12-247 |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 5A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 800V
Current Drain (Id) - Max: 15 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 106 W
Resistance - RDS(On): 180 MOhms
Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.2 kV
Description: TRANS SJT 1200V 5A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 800V
Current Drain (Id) - Max: 15 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 106 W
Resistance - RDS(On): 180 MOhms
Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA10JT12-263 |
|
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Description: TRANS SJT 1200V 25A
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA10JT12-247 |
|
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 10A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V
Current Drain (Id) - Max: 25 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 170 W
Resistance - RDS(On): 100 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.2 kV
Description: TRANS SJT 1200V 10A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V
Current Drain (Id) - Max: 25 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 170 W
Resistance - RDS(On): 100 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA20JT12-247 |
|
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 20A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 800V
Current Drain (Id) - Max: 45 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 282 W
Resistance - RDS(On): 50 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 1 µA @ 1.2 kV
Description: TRANS SJT 1200V 20A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 800V
Current Drain (Id) - Max: 45 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 282 W
Resistance - RDS(On): 50 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 1 µA @ 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA20JT12-263 |
|
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 45A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
Description: TRANS SJT 1200V 45A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 64.66 EUR |
| 10+ | 59.64 EUR |
| GA50JT12-247 |
|
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 100A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 800V
Current Drain (Id) - Max: 100 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 583 W
Resistance - RDS(On): 20 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 10 µA @ 1.2 kV
Description: TRANS SJT 1200V 100A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 800V
Current Drain (Id) - Max: 100 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 583 W
Resistance - RDS(On): 20 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 10 µA @ 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA10SICP12-247 |
|
Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 10A 1.2KV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Current: 10 A
Voltage: 1.2 kV
Description: SIC CO-PACK SJT/RECT 10A 1.2KV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Current: 10 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA20SICP12-263 |
|
Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 20A 1.2KV
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Part Status: Active
Current: 20 A
Voltage: 1.2 kV
Description: SIC CO-PACK SJT/RECT 20A 1.2KV
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Part Status: Active
Current: 20 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA50SICP12-227 |
|
Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 50A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current: 50 A
Voltage: 1.2 kV
Description: SIC CO-PACK SJT/RECT 50A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current: 50 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA100SICP12-227 |
|
Hersteller: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 100A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current: 100 A
Voltage: 1.2 kV
Description: SIC CO-PACK SJT/RECT 100A 1.2KV
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current: 100 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA100SCPL12-227E |
Hersteller: GeneSiC Semiconductor
Description: SIC PHASE LEG BRIDGE 100A 1.2KV
Description: SIC PHASE LEG BRIDGE 100A 1.2KV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 150K100A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 150A DO205
Description: DIODE GEN PURP 1KV 150A DO205
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 150K20A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A
Current - Reverse Leakage @ Vr: 35 mA @ 200 V
Description: DIODE GEN PURP 200V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A
Current - Reverse Leakage @ Vr: 35 mA @ 200 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 66.65 EUR |
| 150K40A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 150A DO205AA
Description: DIODE GEN PURP 400V 150A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 150K60A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A DO205AA
Description: DIODE GEN PURP 600V 150A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 150K80A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 150A DO205AA
Description: DIODE GEN PURP 800V 150A DO205AA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 150KR100A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV DO205AA
Description: DIODE GEN PURP REV 1KV DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 150KR20A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN REV 200V 150A DO205AA
Description: DIODE GEN REV 200V 150A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 150KR40A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN REV 400V 150A DO205AA
Description: DIODE GEN REV 400V 150A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 150KR60A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A DO205AA
Description: DIODE GEN PURP 600V 150A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 150KR80A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GP REV 800V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A
Current - Reverse Leakage @ Vr: 32 mA @ 800 V
Description: DIODE GP REV 800V 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 150 A
Current - Reverse Leakage @ Vr: 32 mA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N1183 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N1183AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 50V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N1183R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 50V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N1186 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 35A DO5
Description: DIODE GEN PURP 200V 35A DO5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N1186R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD REV 200V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD REV 200V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N1188AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N1189R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 600V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N1202AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 200V 12A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2128A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD 50V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD 50V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2129A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2129AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2131AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 200V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2133AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 300V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 300V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2135A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 400V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2135AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 400V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2137A |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 500V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 500V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N2137AR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 500V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 500V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N3208 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N3208R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 50V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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| 1N3209 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 100V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH