Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5699) > Seite 35 nach 95
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MSRT100140AD | GeneSiC Semiconductor |
Description: DIODE MOD GP 1400V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1400 V |
Produkt ist nicht verfügbar |
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MSRT100160AD | GeneSiC Semiconductor |
Description: DIODE MOD GP 1600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
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MSRT10080AD | GeneSiC Semiconductor |
Description: DIODE MODULE GP 800V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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MSRT100100D | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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MSRT100120D | GeneSiC Semiconductor |
Description: DIODE MOD GP 1200V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
Produkt ist nicht verfügbar |
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MSRT100160D | GeneSiC Semiconductor |
Description: DIODE MOD GP 1600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
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MSRT10080D | GeneSiC Semiconductor |
Description: DIODE MODULE GP 800V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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MSRT100140D | GeneSiC Semiconductor |
Description: DIODE MOD GP 1400V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1400 V |
Produkt ist nicht verfügbar |
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MSRT10060D | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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KBP210G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GBPC3504W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 1750 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1N2128AR | GeneSiC Semiconductor |
Description: DIODE STANDARD REV 50V 60A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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GE06MPS06E-TR | GeneSiC Semiconductor |
Description: 650V 6A TO-252-2 SIC SCHOTTKY MPPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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GE06MPS06E-TR | GeneSiC Semiconductor |
Description: 650V 6A TO-252-2 SIC SCHOTTKY MPPackaging: Cut Tape (CT) |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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KBP208G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 471 Stücke: Lieferzeit 10-14 Tag (e) |
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KBP202G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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GD05MPS17J-TR | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1700V 15A TO2637Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
Produkt ist nicht verfügbar |
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GD05MPS17J-TR | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1700V 15A TO2637Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
auf Bestellung 137 Stücke: Lieferzeit 10-14 Tag (e) |
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1N1199A | GeneSiC Semiconductor |
Description: DIODE STANDARD 50V 12A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| GBU6K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 6A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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| GBU6M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 6A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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GBPC2501W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 25A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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| 1N3893 | GeneSiC Semiconductor |
Description: DIODE STANDARD 600V 12A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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| GBU4K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GD05MPS17J | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.7KV 18A TO263-7Packaging: Tube |
Produkt ist nicht verfügbar |
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KBP206G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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GBPC3510W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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| GBU4M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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| KBJ402G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 4A KBJPackaging: Bulk Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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MBRT120100 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 100V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
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MBRT120100R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 100V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
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KBU8G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 8A Bridge Rectifier |
auf Bestellung 2408 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU8D | GeneSiC Semiconductor |
Bridge Rectifiers 200V 8A Bridge Rectifier |
auf Bestellung 3462 Stücke: Lieferzeit 10-14 Tag (e) |
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GBPC2502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 25 A |
auf Bestellung 2058 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC2504T | GeneSiC Semiconductor |
Bridge Rectifiers 400 V - 25 A |
auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC3508W | GeneSiC Semiconductor |
Bridge Rectifiers 800 V - 35 A |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU15G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 15A Bridge Rectifier |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJ2510G | GeneSiC Semiconductor |
Bridge Rectifiers 1000V 25A Bridge Rectifier |
Produkt ist nicht verfügbar |
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KBPC15005W | GeneSiC Semiconductor |
Bridge Rectifiers 50 V - 15 A |
auf Bestellung 499 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC1502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 15 A |
auf Bestellung 809 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC2501W | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 25 A |
auf Bestellung 691 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC35005W | GeneSiC Semiconductor |
Bridge Rectifiers 50 V - 35 A |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC3501T | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 35 A |
auf Bestellung 462 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC1501W | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 15 A |
Produkt ist nicht verfügbar |
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KBJ2504G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 25A Bridge Rectifier |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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| W02M | GeneSiC Semiconductor |
Bridge Rectifiers 200V 1.5A Bridge Rectifier |
Produkt ist nicht verfügbar |
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GBU8J | GeneSiC Semiconductor |
Bridge Rectifiers 600V 8A Bridge Rectifier |
auf Bestellung 2412 Stücke: Lieferzeit 10-14 Tag (e) |
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KBU1004 | GeneSiC Semiconductor |
Bridge Rectifiers 400V 10A Bridge Rectifier |
Produkt ist nicht verfügbar |
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GBPC3508W | GeneSiC Semiconductor |
Bridge Rectifiers 800 V - 35 A |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
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GBPC3510W | GeneSiC Semiconductor |
Bridge Rectifiers 1000V 35A Si Bridge Rectifier |
auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC5006T | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 50 A |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC3502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 35 A |
Produkt ist nicht verfügbar |
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BR305 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R |
auf Bestellung 6794 Stücke: Lieferzeit 10-14 Tag (e) |
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BR68 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R |
auf Bestellung 2004 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC3506W | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 35 A |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC2506T | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 25 A |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC2502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 25 A |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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KBL404G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 4A Bridge Rectifier |
auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
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GBL005 | GeneSiC Semiconductor |
Bridge Rectifiers 50V 4A Bridge Rectifier |
auf Bestellung 3434 Stücke: Lieferzeit 10-14 Tag (e) |
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KBPC2506W | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 25 A |
auf Bestellung 1484 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSRT100140AD |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSRT100160AD |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSRT10080AD |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSRT100100D |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSRT100120D |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSRT100160D |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSRT10080D |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSRT100140D |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSRT10060D |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBP210G |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3504W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.97 EUR |
| 10+ | 5.6 EUR |
| 25+ | 5.13 EUR |
| 100+ | 4.49 EUR |
| 250+ | 4.12 EUR |
| 500+ | 3.85 EUR |
| 1000+ | 3.61 EUR |
| 1N2128AR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD REV 50V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD REV 50V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GE06MPS06E-TR |
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Hersteller: GeneSiC Semiconductor
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Tape & Reel (TR)
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GE06MPS06E-TR |
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Hersteller: GeneSiC Semiconductor
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Cut Tape (CT)
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Cut Tape (CT)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.3 EUR |
| 10+ | 4.04 EUR |
| 25+ | 3.45 EUR |
| 100+ | 2.79 EUR |
| 250+ | 2.46 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.09 EUR |
| KBP208G |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.88 EUR |
| 16+ | 1.17 EUR |
| 25+ | 0.96 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.59 EUR |
| KBP202G |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD05MPS17J-TR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD05MPS17J-TR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.94 EUR |
| 10+ | 7.06 EUR |
| 25+ | 6.75 EUR |
| 100+ | 6.3 EUR |
| 1N1199A |
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Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU6K |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU6M |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC2501W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 50V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N3893 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU4K |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBP206G | ![]() |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3510W |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU4M |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBJ402G |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRT120100 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRT120100R |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBU8G |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 8A Bridge Rectifier
Bridge Rectifiers 400V 8A Bridge Rectifier
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.87 EUR |
| 25+ | 1.68 EUR |
| 100+ | 1.48 EUR |
| 250+ | 1.37 EUR |
| 400+ | 1.15 EUR |
| 1200+ | 1.02 EUR |
| GBU8D |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200V 8A Bridge Rectifier
Bridge Rectifiers 200V 8A Bridge Rectifier
auf Bestellung 3462 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.38 EUR |
| 10+ | 1.68 EUR |
| 25+ | 1.46 EUR |
| 100+ | 1.18 EUR |
| 250+ | 1.02 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.83 EUR |
| GBPC2502W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 25 A
Bridge Rectifiers 200 V - 25 A
auf Bestellung 2058 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.35 EUR |
| 10+ | 5.05 EUR |
| 25+ | 4.61 EUR |
| 100+ | 4.03 EUR |
| 250+ | 3.68 EUR |
| 500+ | 3.43 EUR |
| 1000+ | 3.33 EUR |
| KBPC2504T |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400 V - 25 A
Bridge Rectifiers 400 V - 25 A
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.9 EUR |
| 10+ | 4.66 EUR |
| 25+ | 4.24 EUR |
| 100+ | 3.66 EUR |
| 250+ | 3.31 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 3.03 EUR |
| KBPC3508W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 35 A
Bridge Rectifiers 800 V - 35 A
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.23 EUR |
| 10+ | 4.95 EUR |
| 25+ | 4.51 EUR |
| 100+ | 3.92 EUR |
| 250+ | 3.59 EUR |
| 500+ | 3.34 EUR |
| 1000+ | 3.26 EUR |
| GBU15G |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 15A Bridge Rectifier
Bridge Rectifiers 400V 15A Bridge Rectifier
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.73 EUR |
| 10+ | 1.94 EUR |
| 25+ | 1.69 EUR |
| 100+ | 1.38 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.98 EUR |
| KBJ2510G |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 1000V 25A Bridge Rectifier
Bridge Rectifiers 1000V 25A Bridge Rectifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBPC15005W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 50 V - 15 A
Bridge Rectifiers 50 V - 15 A
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.67 EUR |
| 10+ | 4.45 EUR |
| 25+ | 4.05 EUR |
| 100+ | 3.5 EUR |
| 250+ | 3.19 EUR |
| 500+ | 2.96 EUR |
| 1000+ | 2.87 EUR |
| KBPC1502W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 15 A
Bridge Rectifiers 200 V - 15 A
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.67 EUR |
| 10+ | 4.45 EUR |
| 25+ | 4.05 EUR |
| 100+ | 3.5 EUR |
| 250+ | 3.19 EUR |
| 500+ | 2.96 EUR |
| 1000+ | 2.87 EUR |
| KBPC2501W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 25 A
Bridge Rectifiers 100 V - 25 A
auf Bestellung 691 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.9 EUR |
| 10+ | 4.66 EUR |
| 25+ | 4.24 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.34 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 3.03 EUR |
| KBPC35005W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 50 V - 35 A
Bridge Rectifiers 50 V - 35 A
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.23 EUR |
| 10+ | 4.95 EUR |
| 25+ | 4.51 EUR |
| 100+ | 3.92 EUR |
| 250+ | 3.59 EUR |
| 500+ | 3.34 EUR |
| 1000+ | 3.26 EUR |
| KBPC3501T |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 35 A
Bridge Rectifiers 100 V - 35 A
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.23 EUR |
| 10+ | 4.95 EUR |
| 25+ | 4.51 EUR |
| 100+ | 3.92 EUR |
| 250+ | 3.59 EUR |
| 500+ | 3.34 EUR |
| 1000+ | 3.26 EUR |
| KBPC1501W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 15 A
Bridge Rectifiers 100 V - 15 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBJ2504G |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 25A Bridge Rectifier
Bridge Rectifiers 400V 25A Bridge Rectifier
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.92 EUR |
| 10+ | 3.01 EUR |
| 25+ | 2.71 EUR |
| 100+ | 2.31 EUR |
| W02M |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200V 1.5A Bridge Rectifier
Bridge Rectifiers 200V 1.5A Bridge Rectifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8J |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 600V 8A Bridge Rectifier
Bridge Rectifiers 600V 8A Bridge Rectifier
auf Bestellung 2412 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 1.85 EUR |
| 25+ | 1.4 EUR |
| 100+ | 1.27 EUR |
| 250+ | 1.08 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.92 EUR |
| KBU1004 |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 10A Bridge Rectifier
Bridge Rectifiers 400V 10A Bridge Rectifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3508W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 35 A
Bridge Rectifiers 800 V - 35 A
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.97 EUR |
| 10+ | 5.6 EUR |
| 25+ | 5.14 EUR |
| 100+ | 4.49 EUR |
| 250+ | 4.12 EUR |
| 500+ | 3.85 EUR |
| 1000+ | 3.75 EUR |
| GBPC3510W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 1000V 35A Si Bridge Rectifier
Bridge Rectifiers 1000V 35A Si Bridge Rectifier
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.97 EUR |
| 10+ | 5.6 EUR |
| 25+ | 5.14 EUR |
| 100+ | 4.49 EUR |
| 250+ | 4.12 EUR |
| 500+ | 3.85 EUR |
| 1000+ | 3.75 EUR |
| KBPC5006T |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 50 A
Bridge Rectifiers 600 V - 50 A
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.44 EUR |
| 10+ | 5.14 EUR |
| 25+ | 4.7 EUR |
| 100+ | 4.08 EUR |
| 250+ | 3.8 EUR |
| 500+ | 3.5 EUR |
| 1000+ | 3.41 EUR |
| KBPC3502W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 35 A
Bridge Rectifiers 200 V - 35 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR305 |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R
auf Bestellung 6794 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.38 EUR |
| 10+ | 1.66 EUR |
| 25+ | 1.46 EUR |
| 100+ | 1.18 EUR |
| 200+ | 1.03 EUR |
| 600+ | 0.92 EUR |
| 1000+ | 0.83 EUR |
| BR68 |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R
auf Bestellung 2004 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 2.09 EUR |
| 25+ | 1.83 EUR |
| 100+ | 1.53 EUR |
| 200+ | 1.35 EUR |
| 600+ | 1.23 EUR |
| 1000+ | 1.07 EUR |
| KBPC3506W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 35 A
Bridge Rectifiers 600 V - 35 A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.23 EUR |
| 10+ | 4.95 EUR |
| 25+ | 4.51 EUR |
| 100+ | 3.92 EUR |
| 250+ | 3.59 EUR |
| 500+ | 3.34 EUR |
| 1000+ | 3.26 EUR |
| KBPC2506T |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 25 A
Bridge Rectifiers 600 V - 25 A
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.9 EUR |
| 10+ | 4.66 EUR |
| 25+ | 4.24 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.34 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 3.03 EUR |
| KBPC2502W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 25 A
Bridge Rectifiers 200 V - 25 A
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.9 EUR |
| 10+ | 4.66 EUR |
| 25+ | 4.24 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.34 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 3.03 EUR |
| KBL404G |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 4A Bridge Rectifier
Bridge Rectifiers 400V 4A Bridge Rectifier
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.61 EUR |
| 25+ | 1.4 EUR |
| 100+ | 1.13 EUR |
| 250+ | 0.98 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.79 EUR |
| GBL005 |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 50V 4A Bridge Rectifier
Bridge Rectifiers 50V 4A Bridge Rectifier
auf Bestellung 3434 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.87 EUR |
| 10+ | 6.58 EUR |
| 25+ | 6.16 EUR |
| 100+ | 5.53 EUR |
| 250+ | 5.16 EUR |
| 500+ | 4.88 EUR |
| 1000+ | 4.26 EUR |
| KBPC2506W |
![]() |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 25 A
Bridge Rectifiers 600 V - 25 A
auf Bestellung 1484 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.9 EUR |
| 10+ | 4.66 EUR |
| 25+ | 4.24 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.34 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 3.03 EUR |







