Die Produkte genesic semiconductor
Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung |
Informationen zu Lagerverfügbarkeit und Lieferzeiten |
Preis ohne MwSt |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S85VR |
![]() |
GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1.4KV 85A DO5 Base Part Number: S85V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-5 Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Current - Reverse Leakage @ Vr: 10µA @ 100V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A Current - Average Rectified (Io): 85A Voltage - DC Reverse (Vr) (Max): 1400V Diode Type: Standard, Reverse Polarity Part Status: Active Packaging: Bulk Manufacturer: GeneSiC Semiconductor |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 400 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
S85Y |
![]() |
GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.6KV 85A DO5 Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A Current - Average Rectified (Io): 85A Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV) Diode Type: Standard Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-5 Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Current - Reverse Leakage @ Vr: 10µA @ 100V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||
![]() |
S85YR |
![]() |
GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1.6KV 85A DO5 Diode Type: Standard, Reverse Polarity Part Status: Active Packaging: Bulk Base Part Number: S85Y Manufacturer: GeneSiC Semiconductor Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-5 Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Current - Reverse Leakage @ Vr: 10µA @ 100V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A Current - Average Rectified (Io): 85A Voltage - DC Reverse (Vr) (Max): 1600V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
GA10JT12-SMB3L | GeneSiC Semiconductor | Description: TRANS SJT 1.2KV 10A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||
![]() |
GA10JT12-263 |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 1200V 25A Packaging: Tube Drain to Source Voltage (Vdss): 1200 V Part Status: Active Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 10A Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GA10JT12-247 |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 1.2KV 10A Drain to Source Voltage (Vdss): 1200V (1.2kV) FET Feature: Super Junction FET Type: Silicon Carbide, Normally Off Supplier Device Package: TO-247AB Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Power - Max: 170W Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 221 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GA20JT12-247 |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 1.2KV 20A Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A Supplier Device Package: TO-247AB Package / Case: TO-247-3 Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) FET Feature: Super Junction FET Type: Silicon Carbide, Normally Off Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Power - Max: 282W |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 45 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GA20JT12-263 |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 1200V 45A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V Drain to Source Voltage (Vdss): 1200 V Part Status: Active Supplier Device Package: TO-263-7 Power Dissipation (Max): 282W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 20A Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Tube |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 85 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
GA02JT33-SMB | GeneSiC Semiconductor | Description: TRANS SJT 3.3KV 2A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||||
![]() |
GA16JT17-247 |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 1700V 16A TO-247AB Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C) Rds On (Max) @ Id, Vgs: 110mOhm @ 16A Power Dissipation (Max): 282W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GA50JT12-247 |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 1200V 100A TO247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 50A Power Dissipation (Max): 583W (Tc) Supplier Device Package: TO-247AB Part Status: Obsolete Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 7209 pF @ 800 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 3 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
2N7636-GA |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 650V 4A TO276 Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C) Drain to Source Voltage (Vdss): 650V FET Feature: Super Junction FET Type: Silicon Carbide, Normally Off Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A Power - Max: 125W Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Surface Mount Package / Case: TO-276AA Supplier Device Package: TO-276 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||
2N7640-GA |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 650V 16A TO276 FET Type: Silicon Carbide, Normally Off FET Feature: Super Junction Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (155°C) Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Power - Max: 330W Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Surface Mount Package / Case: TO-276AA Supplier Device Package: TO-276 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||
2N7639-GA |
![]() |
GeneSiC Semiconductor |
Description: TRANS SJT 650V 15A TO-257 FET Type: Silicon Carbide, Normally Off FET Feature: Super Junction Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) (155°C) Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Power - Max: 172W Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||
GA15IDDJT22-FR4 |
![]() |
GeneSiC Semiconductor |
Description: BOARD GATE DRIVER Primary Attributes: Isolated Main Purpose: Power Management, Gate Driver |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 28 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
|
GA03IDDJT30-FR4 |
![]() |
GeneSiC Semiconductor |
Description: BOARD GATE DRIVER Primary Attributes: Isolated Main Purpose: Power Management, Gate Driver |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 13 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GA01PNS150-220 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SILICON CARBIDE 15KV 1A Part Status: Active Voltage - Peak Reverse (Max): 15000V Capacitance @ Vr, F: 7pF @ 1000V, 1MHz Operating Temperature: -55°C ~ 175°C (TJ) Diode Type: PIN - Single Package / Case: Axial Packaging: Tube Current - Max: 1 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 4 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GA01PNS80-220 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SILICON CARBIDE 8KV Voltage - Peak Reverse (Max): 8000V Capacitance @ Vr, F: 4pF @ 1000V, 1MHz Operating Temperature: -55°C ~ 175°C (TJ) Diode Type: PIN - Single Package / Case: Axial Packaging: Tube Part Status: Active Current - Max: 2 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
|
GA040TH65-227SP |
![]() |
GeneSiC Semiconductor |
Description: MOD THYRISTOR CUSTOM SOT227 Structure: Single Current - Hold (Ih) (Max): 780mA Current - On State (It (RMS)) (Max): 69A Current - On State (It (AV)) (Max): 40A Current - Gate Trigger (Igt) (Max): 30mA Voltage - Off State: 6500V Number of SCRs, Diodes: 1 SCR |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
|
GA060TH65-227SP |
![]() |
GeneSiC Semiconductor |
Description: MOD THYRISTOR CUSTOM SOT227 Current - On State (It (AV)) (Max): 60A Current - Gate Trigger (Igt) (Max): 100mA Voltage - Off State: 6500V Number of SCRs, Diodes: 1 SCR Structure: Single Current - On State (It (RMS)) (Max): 104A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
|
GA080TH65-227SP |
![]() |
GeneSiC Semiconductor |
Description: MOD THYRISTOR CUSTOM SOT227 Current - On State (It (RMS)) (Max): 139A Current - On State (It (AV)) (Max): 80A Current - Gate Trigger (Igt) (Max): 100mA Voltage - Off State: 6500V Number of SCRs, Diodes: 1 SCR Structure: Single |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC3504W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 35A GBPC-W Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Package / Case: 4-Square, GBPC-W Current - Average Rectified (Io): 35 A Packaging: Bulk Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 882 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GBPC2502W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 25A GBPC-W Base Part Number: GBPC2502 Manufacturer: GeneSiC Semiconductor Supplier Device Package: GBPC-W Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Average Rectified (Io): 25A Technology: Standard Voltage - Peak Reverse (Max): 200V Diode Type: Single Phase Part Status: Active Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 615 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GBPC2506W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 25A GBPC-W Current - Reverse Leakage @ Vr: 5µA @ 600V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Average Rectified (Io): 25A Voltage - Peak Reverse (Max): 600V Technology: Standard Part Status: Active Diode Type: Single Phase Packaging: Bulk Supplier Device Package: GBPC-W Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC2504W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 25A GBPC-W Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 320 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GBPC3508W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 35A GBPC-W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Current - Average Rectified (Io): 35 A Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Diode Type: Single Phase Mounting Type: Through Hole Packaging: Bulk Package / Case: 4-Square, GBPC-W |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 5846 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GBPC2508W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 25A GBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC2510W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 25A GBPC-W Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBP201G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 2A KBP Packaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBP202G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 2A KBP Packaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBP203G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 2A KBP Voltage - Peak Reverse (Max): 200V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Average Rectified (Io): 2A Technology: Standard Diode Type: Single Phase Part Status: Obsolete Packaging: Bulk Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||||||||||||
![]() |
KBP204G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 2A KBP Part Status: Active Voltage - Peak Reverse (Max): 400 V Supplier Device Package: KBP Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Mounting Type: Through Hole Package / Case: 4-SIP, KBP Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBP210G |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A KBP Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Packaging: Bulk Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: KBP Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBP |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC15005W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 15A KBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Part Status: Active Voltage - Peak Reverse (Max): 50 V Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC1501W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 15A KBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 100 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC1504W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 15A KBPC-W Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC1506W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 15A KBPC-W Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC1508W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 15A KBPC-W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
|
KBPC1510T |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 15A KBPC-T Current - Reverse Leakage @ Vr: 5 µA @ 800 V Part Status: Active Voltage - Peak Reverse (Max): 1 kV Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Supplier Device Package: KBPC-T Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: QC Terminal Package / Case: 4-Square, KBPC-T Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC1510W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 15A KBPC-W Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Mounting Type: Chassis Mount Package / Case: 4-Square, KBPC-W Packaging: Bulk Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 1 kV |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC1501W |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 100V 15A GBPC-W Supplier Device Package: GBPC-W Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Current - DC Forward (If) (Max): 15A Voltage - Peak Reverse (Max): 100V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC1502W |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 200V 15A GBPC-W Supplier Device Package: GBPC-W Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Current - DC Forward (If) (Max): 15A Voltage - Peak Reverse (Max): 200V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC1504W |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 400V 15A GBPC-W Supplier Device Package: GBPC-W Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Current - DC Forward (If) (Max): 15A Voltage - Peak Reverse (Max): 400V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC1508W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 15A GBPC-W Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 800V Part Status: Active Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Average Rectified (Io): 15A Voltage - Peak Reverse (Max): 800V Technology: Standard Supplier Device Package: GBPC-W Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC1510T |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC Part Status: Active Supplier Device Package: GBPC Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Packaging: Bulk Package / Case: 4-Square, GBPC Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 1 kV |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC1510W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 15A GBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Package / Case: 4-Square, GBPC-W Packaging: Bulk Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC2501W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 25A KBPC-W Package / Case: 4-Square, KBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 100 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC2502W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 25A KBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC2504W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 25A KBPC-W Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Packaging: Bulk Package / Case: 4-Square, KBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 400 V Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC2508W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 25A KBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Diode Type: Single Phase Mounting Type: Through Hole Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 4-Square, KBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
|
KBPC2510T |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 25A KBPC-T Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: KBPC-T Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: QC Terminal Package / Case: 4-Square, KBPC-T |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC2510W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 25A KBPC-W Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Operating Temperature: -55°C ~ 150°C (TJ) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC35005W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 35A KBPC-W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 50 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 50 V Package / Case: 4-Square, KBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC3501W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 35A KBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 100 V Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 100 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC3502W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 35A KBPC-W Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Average Rectified (Io): 35 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC3504W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 35A KBPC-W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Current - Reverse Leakage @ Vr: 10 µA @ 400 V Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC3506W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 35A KBPC-W Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC3508W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 35A KBPC-W Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Package / Case: 4-Square, KBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC15005W |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 50V 15A GBPC-W Supplier Device Package: GBPC-W Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Current - DC Forward (If) (Max): 15A Voltage - Peak Reverse (Max): 50V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC3506W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 35A GBPC-W Package / Case: 4-Square, GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC25005W |
![]() |
GeneSiC Semiconductor |
Description: DIODE BRIDGE 50V 25A GBPC-W Supplier Device Package: GBPC-W Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Current - DC Forward (If) (Max): 25A Voltage - Peak Reverse (Max): 50V Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC3502W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 35A GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC2510T |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: GBPC Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, GBPC |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC2501W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 25A GBPC-W Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 50 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC50005W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 50A KBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 50 A Voltage - Peak Reverse (Max): 50 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC5002W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 50A KBPC-W Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 50 A Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC5004W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 50A KBPC-W Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 50 A Voltage - Peak Reverse (Max): 400 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC5006W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 50A KBPC-W Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC5008W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 50A KBPC-W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 50 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
KBPC5010W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 50A KBPC-W Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 50 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: KBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC5002W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 50A GBPC-W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Diode Type: Single Phase Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 50 A Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Package / Case: 4-Square, GBPC-W Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC5004W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 50A GBPC-W Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 50 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC5006W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 50A GBPC-W Package / Case: 4-Square, GBPC-W Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 50 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GBPC5008W |
![]() |
GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 50A GBPC-W Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: GBPC-W Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 50 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
M3P75A-40 |
![]() |
GeneSiC Semiconductor |
Description: DIODE MODULE STD 75A 400V 3PH Current - DC Forward (If) (Max): 75A Voltage - Peak Reverse (Max): 400V Diode Type: Three Phase |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GA100SBJT12-FR4 |
![]() |
GeneSiC Semiconductor |
Description: BOARD EVAL DBL PULSE Supplied Contents: Board(s) Function: * Type: Power Management Part Status: Obsolete |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 2 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GC2X10MPS12-247 |
![]() |
GeneSiC Semiconductor |
Description: SIC DIODE 1200V 20A TO-247-3 Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 50A (DC) Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Diode Type: Silicon Carbide Schottky Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 140 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
|
GC50MPS12-247 |
![]() |
GeneSiC Semiconductor |
Description: SIC DIODE 1200V 50A TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 212A (DC) Capacitance @ Vr, F: 3263pF @ 1V, 1MHz Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Diode Type: Silicon Carbide Schottky Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
GC2X15MPS12-247 |
![]() |
GeneSiC Semiconductor |
Description: SIC DIODE 1200V 30A TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 14 µA @ 1200 V Current - Average Rectified (Io) (per Diode): 75A (DC) Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Diode Type: Silicon Carbide Schottky Mounting Type: Through Hole Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 58 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GC2X20MPS12-247 |
![]() |
GeneSiC Semiconductor |
Description: SIC DIODE 1200V 40A TO-247-3 Current - Reverse Leakage @ Vr: 18µA @ 1200V Reverse Recovery Time (trr): 0ns Speed: No Recovery Time > 500mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Current - Average Rectified (Io) (per Diode): 90A (DC) Base Part Number: GC2X20 Supplier Device Package: TO-247-3 Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Silicon Carbide Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Tube Manufacturer: GeneSiC Semiconductor |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 286 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GC2X5MPS12-247 |
![]() |
GeneSiC Semiconductor |
Description: SIC DIODE 1200V 10A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Diode Type: Silicon Carbide Schottky Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 27A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 4 µA @ 1200 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 340 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
|
GC15MPS12-247 |
![]() |
GeneSiC Semiconductor |
Description: SIC DIODE 1200V 15A TO-247-2 Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 75A (DC) Capacitance @ Vr, F: 1089pF @ 1V, 1MHz Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Diode Type: Silicon Carbide Schottky Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 14 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 253 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GC20MPS12-220 |
![]() |
GeneSiC Semiconductor |
Description: SIC DIODE 1200V 20A TO-220-2 Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 94A (DC) Capacitance @ Vr, F: 1298pF @ 1V, 1MHz Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Diode Type: Silicon Carbide Schottky Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 18 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 328 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GC15MPS12-220 |
![]() |
GeneSiC Semiconductor |
Description: SIC DIODE 1200V 15A TO-220-2 Current - Reverse Leakage @ Vr: 14 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 82A (DC) Capacitance @ Vr, F: 1089pF @ 1V, 1MHz Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Diode Type: Silicon Carbide Schottky Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 247 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GB20SLT12-247D |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 1.2KV 25A TO247D Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Current - Average Rectified (Io) (per Diode): 25A Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV) Diode Type: Silicon Carbide Schottky Diode Configuration: 1 Pair Common Cathode Supplier Device Package: TO-247 Package / Case: TO-247-3 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 50µA @ 1200V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 243 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
GB10SLT12-247D |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 1.2KV 12A TO247D Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV) Current - Average Rectified (Io) (per Diode): 12A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50µA @ 1200V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 210 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
MUR2X030A02 |
![]() |
GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 30A SOT227 Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Current - Reverse Leakage @ Vr: 25 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
MUR2X030A06 |
![]() |
GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
MBR2X030A045 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 60A SOT227 Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 28 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
MBR2X030A100 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 60A SOT227 Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Package / Case: SOT-227-4, miniBLOC Packaging: Bulk Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
MBR2X080A100 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 80A SOT227 Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 80A Diode Configuration: 2 Independent Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Current - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 4 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
MUR2X060A04 |
![]() |
GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 60A SOT227 Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V Packaging: Bulk Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 60A Reverse Recovery Time (trr): 75 ns Diode Configuration: 2 Independent Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 38 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
MBR2X060A045 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 120A SOT227 Current - Reverse Leakage @ Vr: 1 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 120A Diode Configuration: 2 Independent Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||||||||||||
![]() |
MBR2X080A045 |
![]() |
GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 80A SOT227 Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 80A Diode Configuration: 2 Independent Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 5 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
MUR2X060A02 |
![]() |
GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 60A SOT227 Diode Type: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk Current - Reverse Leakage @ Vr: 25 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 21 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||||||||||||
![]() |
MUR2X060A06 |
![]() |
GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 60A SOT227 Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 60A Reverse Recovery Time (trr): 90 ns Diode Configuration: 2 Independent Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Voltage - DC Reverse (Vr) (Max): 600 V Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 7 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
S85VR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.4KV 85A DO5
Base Part Number: S85V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1400V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
auf Bestellung 400 Stücke Description: DIODE GEN PURP REV 1.4KV 85A DO5
Base Part Number: S85V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1400V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor

Lieferzeit 21-28 Tag (e)
S85Y |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 85A DO5
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV)
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.6KV 85A DO5
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV)
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
S85YR |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.6KV 85A DO5
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Base Part Number: S85Y
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1600V
auf Bestellung 1 Stücke Description: DIODE GEN PURP REV 1.6KV 85A DO5
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Base Part Number: S85Y
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Current - Average Rectified (Io): 85A
Voltage - DC Reverse (Vr) (Max): 1600V

Lieferzeit 21-28 Tag (e)
GA10JT12-SMB3L |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS SJT 1.2KV 10A
GA10JT12-263 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Part Status: Active
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 10A
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS SJT 1200V 25A
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Part Status: Active
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 10A
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
GA10JT12-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 10A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power - Max: 170W
Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
auf Bestellung 221 Stücke Description: TRANS SJT 1.2KV 10A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power - Max: 170W
Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)

Lieferzeit 21-28 Tag (e)
GA20JT12-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.2KV 20A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power - Max: 282W
auf Bestellung 45 Stücke Description: TRANS SJT 1.2KV 20A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power - Max: 282W

Lieferzeit 21-28 Tag (e)
GA20JT12-263 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
Drain to Source Voltage (Vdss): 1200 V
Part Status: Active
Supplier Device Package: TO-263-7
Power Dissipation (Max): 282W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 85 Stücke Description: TRANS SJT 1200V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
Drain to Source Voltage (Vdss): 1200 V
Part Status: Active
Supplier Device Package: TO-263-7
Power Dissipation (Max): 282W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube

Lieferzeit 21-28 Tag (e)
|
GA02JT33-SMB |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 3.3KV 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS SJT 3.3KV 2A
GA16JT17-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 16A TO-247AB
Packaging: Tube
Part Status: Obsolete
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A
Power Dissipation (Max): 282W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS SJT 1700V 16A TO-247AB
Packaging: Tube
Part Status: Obsolete
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A
Power Dissipation (Max): 282W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
GA50JT12-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 100A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A
Power Dissipation (Max): 583W (Tc)
Supplier Device Package: TO-247AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 7209 pF @ 800 V
auf Bestellung 3 Stücke Description: TRANS SJT 1200V 100A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A
Power Dissipation (Max): 583W (Tc)
Supplier Device Package: TO-247AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 7209 pF @ 800 V

Lieferzeit 21-28 Tag (e)
2N7636-GA |
![]() |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 650V 4A TO276
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Drain to Source Voltage (Vdss): 650V
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A
Power - Max: 125W
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-276AA
Supplier Device Package: TO-276
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS SJT 650V 4A TO276
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Drain to Source Voltage (Vdss): 650V
FET Feature: Super Junction
FET Type: Silicon Carbide, Normally Off
Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A
Power - Max: 125W
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-276AA
Supplier Device Package: TO-276
2N7640-GA |
![]() |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 650V 16A TO276
FET Type: Silicon Carbide, Normally Off
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (155°C)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A
Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V
Power - Max: 330W
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-276AA
Supplier Device Package: TO-276
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS SJT 650V 16A TO276
FET Type: Silicon Carbide, Normally Off
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (155°C)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A
Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V
Power - Max: 330W
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-276AA
Supplier Device Package: TO-276
2N7639-GA |
![]() |
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 650V 15A TO-257
FET Type: Silicon Carbide, Normally Off
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) (155°C)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A
Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V
Power - Max: 172W
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS SJT 650V 15A TO-257
FET Type: Silicon Carbide, Normally Off
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) (155°C)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A
Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V
Power - Max: 172W
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
GA15IDDJT22-FR4 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BOARD GATE DRIVER
Primary Attributes: Isolated
Main Purpose: Power Management, Gate Driver
auf Bestellung 28 Stücke Description: BOARD GATE DRIVER
Primary Attributes: Isolated
Main Purpose: Power Management, Gate Driver

Lieferzeit 21-28 Tag (e)
GA03IDDJT30-FR4 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BOARD GATE DRIVER
Primary Attributes: Isolated
Main Purpose: Power Management, Gate Driver
auf Bestellung 13 Stücke Description: BOARD GATE DRIVER
Primary Attributes: Isolated
Main Purpose: Power Management, Gate Driver

Lieferzeit 21-28 Tag (e)
GA01PNS150-220 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SILICON CARBIDE 15KV 1A
Part Status: Active
Voltage - Peak Reverse (Max): 15000V
Capacitance @ Vr, F: 7pF @ 1000V, 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: PIN - Single
Package / Case: Axial
Packaging: Tube
Current - Max: 1 A
auf Bestellung 4 Stücke Description: DIODE SILICON CARBIDE 15KV 1A
Part Status: Active
Voltage - Peak Reverse (Max): 15000V
Capacitance @ Vr, F: 7pF @ 1000V, 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: PIN - Single
Package / Case: Axial
Packaging: Tube
Current - Max: 1 A

Lieferzeit 21-28 Tag (e)
|
GA01PNS80-220 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SILICON CARBIDE 8KV
Voltage - Peak Reverse (Max): 8000V
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: PIN - Single
Package / Case: Axial
Packaging: Tube
Part Status: Active
Current - Max: 2 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SILICON CARBIDE 8KV
Voltage - Peak Reverse (Max): 8000V
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: PIN - Single
Package / Case: Axial
Packaging: Tube
Part Status: Active
Current - Max: 2 A
GA040TH65-227SP |
![]() |
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Structure: Single
Current - Hold (Ih) (Max): 780mA
Current - On State (It (RMS)) (Max): 69A
Current - On State (It (AV)) (Max): 40A
Current - Gate Trigger (Igt) (Max): 30mA
Voltage - Off State: 6500V
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOD THYRISTOR CUSTOM SOT227
Structure: Single
Current - Hold (Ih) (Max): 780mA
Current - On State (It (RMS)) (Max): 69A
Current - On State (It (AV)) (Max): 40A
Current - Gate Trigger (Igt) (Max): 30mA
Voltage - Off State: 6500V
Number of SCRs, Diodes: 1 SCR
GA060TH65-227SP |
![]() |
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Current - On State (It (AV)) (Max): 60A
Current - Gate Trigger (Igt) (Max): 100mA
Voltage - Off State: 6500V
Number of SCRs, Diodes: 1 SCR
Structure: Single
Current - On State (It (RMS)) (Max): 104A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOD THYRISTOR CUSTOM SOT227
Current - On State (It (AV)) (Max): 60A
Current - Gate Trigger (Igt) (Max): 100mA
Voltage - Off State: 6500V
Number of SCRs, Diodes: 1 SCR
Structure: Single
Current - On State (It (RMS)) (Max): 104A
GA080TH65-227SP |
![]() |
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Current - On State (It (RMS)) (Max): 139A
Current - On State (It (AV)) (Max): 80A
Current - Gate Trigger (Igt) (Max): 100mA
Voltage - Off State: 6500V
Number of SCRs, Diodes: 1 SCR
Structure: Single
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOD THYRISTOR CUSTOM SOT227
Current - On State (It (RMS)) (Max): 139A
Current - On State (It (AV)) (Max): 80A
Current - Gate Trigger (Igt) (Max): 100mA
Voltage - Off State: 6500V
Number of SCRs, Diodes: 1 SCR
Structure: Single
GBPC3504W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Package / Case: 4-Square, GBPC-W
Current - Average Rectified (Io): 35 A
Packaging: Bulk
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
auf Bestellung 882 Stücke Description: BRIDGE RECT 1P 400V 35A GBPC-W
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Package / Case: 4-Square, GBPC-W
Current - Average Rectified (Io): 35 A
Packaging: Bulk
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase

Lieferzeit 21-28 Tag (e)
auf Bestellung 2482 Stücke - Preis und Lieferfrist anzeigen
|
GBPC2502W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 25A GBPC-W
Base Part Number: GBPC2502
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Average Rectified (Io): 25A
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
auf Bestellung 615 Stücke Description: BRIDGE RECT 1P 200V 25A GBPC-W
Base Part Number: GBPC2502
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Average Rectified (Io): 25A
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
auf Bestellung 321 Stücke - Preis und Lieferfrist anzeigen
GBPC2506W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 25A GBPC-W
Current - Reverse Leakage @ Vr: 5µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Average Rectified (Io): 25A
Voltage - Peak Reverse (Max): 600V
Technology: Standard
Part Status: Active
Diode Type: Single Phase
Packaging: Bulk
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 25A GBPC-W
Current - Reverse Leakage @ Vr: 5µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Average Rectified (Io): 25A
Voltage - Peak Reverse (Max): 600V
Technology: Standard
Part Status: Active
Diode Type: Single Phase
Packaging: Bulk
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 315 Stücke - Preis und Lieferfrist anzeigen
GBPC2504W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 25A GBPC-W
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
auf Bestellung 320 Stücke Description: BRIDGE RECT 1P 400V 25A GBPC-W
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase

Lieferzeit 21-28 Tag (e)
auf Bestellung 2591 Stücke - Preis und Lieferfrist anzeigen
GBPC3508W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Current - Average Rectified (Io): 35 A
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
auf Bestellung 5846 Stücke Description: BRIDGE RECT 1P 800V 35A GBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Current - Average Rectified (Io): 35 A
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-Square, GBPC-W

Lieferzeit 21-28 Tag (e)
auf Bestellung 1853 Stücke - Preis und Lieferfrist anzeigen
|
GBPC2508W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 25A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
auf Bestellung 196 Stücke - Preis und Lieferfrist anzeigen
GBPC2510W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1KV 25A GBPC-W
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
auf Bestellung 804 Stücke - Preis und Lieferfrist anzeigen
KBP201G |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 19180 Stücke - Preis und Lieferfrist anzeigen
KBP202G |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 23768 Stücke - Preis und Lieferfrist anzeigen
KBP203G |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 2A KBP
Voltage - Peak Reverse (Max): 200V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Technology: Standard
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 200V 2A KBP
Voltage - Peak Reverse (Max): 200V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Technology: Standard
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP
KBP204G |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 2A KBP
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 400V 2A KBP
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Bulk
auf Bestellung 30654 Stücke - Preis und Lieferfrist anzeigen
KBP210G |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Packaging: Bulk
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1KV 2A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Packaging: Bulk
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
auf Bestellung 73951 Stücke - Preis und Lieferfrist anzeigen
KBPC15005W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 15A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 50V 15A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
KBPC1501W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
KBPC1504W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 15A KBPC-W
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 15A KBPC-W
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
KBPC1506W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 15A KBPC-W
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 15A KBPC-W
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
auf Bestellung 54 Stücke - Preis und Lieferfrist anzeigen
KBPC1508W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 15A KBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 15A KBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 610 Stücke - Preis und Lieferfrist anzeigen
KBPC1510T |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Supplier Device Package: KBPC-T
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, KBPC-T
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1KV 15A KBPC-T
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Supplier Device Package: KBPC-T
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, KBPC-T
Packaging: Bulk
KBPC1510W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A KBPC-W
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Mounting Type: Chassis Mount
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 1 kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1KV 15A KBPC-W
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Mounting Type: Chassis Mount
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 1 kV
auf Bestellung 1486 Stücke - Preis und Lieferfrist anzeigen
GBPC1501W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 15A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 15A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 100V 15A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 15A
Voltage - Peak Reverse (Max): 100V
Diode Type: Single Phase
auf Bestellung 896 Stücke - Preis und Lieferfrist anzeigen
GBPC1502W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 15A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 15A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 200V 15A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 15A
Voltage - Peak Reverse (Max): 200V
Diode Type: Single Phase
auf Bestellung 191 Stücke - Preis und Lieferfrist anzeigen
GBPC1504W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 15A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 15A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 400V 15A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 15A
Voltage - Peak Reverse (Max): 400V
Diode Type: Single Phase
auf Bestellung 213 Stücke - Preis und Lieferfrist anzeigen
GBPC1508W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 15A GBPC-W
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Part Status: Active
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Average Rectified (Io): 15A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 15A GBPC-W
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Part Status: Active
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Average Rectified (Io): 15A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
auf Bestellung 598 Stücke - Preis und Lieferfrist anzeigen
GBPC1510T |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Part Status: Active
Supplier Device Package: GBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-Square, GBPC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 1 kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1KV 15A GBPC
Part Status: Active
Supplier Device Package: GBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-Square, GBPC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 1 kV
GBPC1510W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1KV 15A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Mounting Type: Through Hole
auf Bestellung 6773 Stücke - Preis und Lieferfrist anzeigen
KBPC2501W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 25A KBPC-W
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 100V 25A KBPC-W
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
KBPC2502W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 25A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 200V 25A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
auf Bestellung 11522 Stücke - Preis und Lieferfrist anzeigen
KBPC2504W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 25A KBPC-W
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 25A KBPC-W
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
auf Bestellung 114 Stücke - Preis und Lieferfrist anzeigen
KBPC2508W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Diode Type: Single Phase
Mounting Type: Through Hole
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 25A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Diode Type: Single Phase
Mounting Type: Through Hole
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
auf Bestellung 3216 Stücke - Preis und Lieferfrist anzeigen
KBPC2510T |
![]() |
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBPC-T
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, KBPC-T
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBPC-T
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, KBPC-T
KBPC2510W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A KBPC-W
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1KV 25A KBPC-W
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1214 Stücke - Preis und Lieferfrist anzeigen
KBPC35005W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 35A KBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 50V 35A KBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
KBPC3501W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 35A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 100V 35A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
KBPC3502W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 35A KBPC-W
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 200V 35A KBPC-W
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
KBPC3504W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 35A KBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 35A KBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Packaging: Bulk
auf Bestellung 198 Stücke - Preis und Lieferfrist anzeigen
KBPC3506W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 35A KBPC-W
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 35A KBPC-W
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
KBPC3508W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A KBPC-W
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 35A KBPC-W
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
auf Bestellung 1838 Stücke - Preis und Lieferfrist anzeigen
GBPC15005W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 50V 15A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 15A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 50V 15A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 15A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
auf Bestellung 705 Stücke - Preis und Lieferfrist anzeigen
GBPC3506W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 35A GBPC-W
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
auf Bestellung 10100 Stücke - Preis und Lieferfrist anzeigen
GBPC25005W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE BRIDGE 50V 25A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 25A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE BRIDGE 50V 25A GBPC-W
Supplier Device Package: GBPC-W
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 25A
Voltage - Peak Reverse (Max): 50V
Diode Type: Single Phase
auf Bestellung 47022 Stücke - Preis und Lieferfrist anzeigen
GBPC3502W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 35A GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 200V 35A GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
auf Bestellung 98 Stücke - Preis und Lieferfrist anzeigen
GBPC2510T |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC
GBPC2501W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 25A GBPC-W
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 50V 25A GBPC-W
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
KBPC50005W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 50V 50A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
KBPC5002W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A KBPC-W
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 200V 50A KBPC-W
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Packaging: Bulk
KBPC5004W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 50A KBPC-W
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 50A KBPC-W
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 400 V
KBPC5006W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 50A KBPC-W
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 50A KBPC-W
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 916 Stücke - Preis und Lieferfrist anzeigen
KBPC5008W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 50A KBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 50A KBPC-W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
KBPC5010W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 50A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1KV 50A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
auf Bestellung 2895 Stücke - Preis und Lieferfrist anzeigen
GBPC5002W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A GBPC-W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 200V 50A GBPC-W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
GBPC5004W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 50A GBPC-W
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 50A GBPC-W
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 350 Stücke - Preis und Lieferfrist anzeigen
GBPC5006W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 50A GBPC-W
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 50A GBPC-W
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 696 Stücke - Preis und Lieferfrist anzeigen
GBPC5008W |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 50A GBPC-W
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 800V 50A GBPC-W
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 50 A
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
M3P75A-40 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE STD 75A 400V 3PH
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 400V
Diode Type: Three Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE STD 75A 400V 3PH
Current - DC Forward (If) (Max): 75A
Voltage - Peak Reverse (Max): 400V
Diode Type: Three Phase
GA100SBJT12-FR4 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: BOARD EVAL DBL PULSE
Supplied Contents: Board(s)
Function: *
Type: Power Management
Part Status: Obsolete
auf Bestellung 2 Stücke Description: BOARD EVAL DBL PULSE
Supplied Contents: Board(s)
Function: *
Type: Power Management
Part Status: Obsolete

Lieferzeit 21-28 Tag (e)
GC2X10MPS12-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 20A TO-247-3
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 50A (DC)
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
auf Bestellung 140 Stücke Description: SIC DIODE 1200V 20A TO-247-3
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 50A (DC)
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole

Lieferzeit 21-28 Tag (e)
auf Bestellung 26 Stücke - Preis und Lieferfrist anzeigen
GC50MPS12-247 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 50A TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 212A (DC)
Capacitance @ Vr, F: 3263pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SIC DIODE 1200V 50A TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 212A (DC)
Capacitance @ Vr, F: 3263pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
GC2X15MPS12-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 30A TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Current - Average Rectified (Io) (per Diode): 75A (DC)
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
auf Bestellung 58 Stücke Description: SIC DIODE 1200V 30A TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Current - Average Rectified (Io) (per Diode): 75A (DC)
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active

Lieferzeit 21-28 Tag (e)
auf Bestellung 46 Stücke - Preis und Lieferfrist anzeigen
GC2X20MPS12-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 40A TO-247-3
Current - Reverse Leakage @ Vr: 18µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Average Rectified (Io) (per Diode): 90A (DC)
Base Part Number: GC2X20
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: GeneSiC Semiconductor
auf Bestellung 286 Stücke Description: SIC DIODE 1200V 40A TO-247-3
Current - Reverse Leakage @ Vr: 18µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Average Rectified (Io) (per Diode): 90A (DC)
Base Part Number: GC2X20
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: GeneSiC Semiconductor

Lieferzeit 21-28 Tag (e)
GC2X5MPS12-247 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 10A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
auf Bestellung 340 Stücke Description: SIC DIODE 1200V 10A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 60 Stücke - Preis und Lieferfrist anzeigen
|
GC15MPS12-247 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 15A TO-247-2
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 75A (DC)
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 253 Stücke Description: SIC DIODE 1200V 15A TO-247-2
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 75A (DC)
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C

Lieferzeit 21-28 Tag (e)
GC20MPS12-220 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 20A TO-220-2
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 94A (DC)
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
auf Bestellung 328 Stücke Description: SIC DIODE 1200V 20A TO-220-2
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 94A (DC)
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A

Lieferzeit 21-28 Tag (e)
GC15MPS12-220 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 15A TO-220-2
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 82A (DC)
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 247 Stücke Description: SIC DIODE 1200V 15A TO-220-2
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 82A (DC)
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube

Lieferzeit 21-28 Tag (e)
auf Bestellung 54 Stücke - Preis und Lieferfrist anzeigen
|
GB20SLT12-247D |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 25A TO247D
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io) (per Diode): 25A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Silicon Carbide Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 50µA @ 1200V
auf Bestellung 243 Stücke Description: DIODE SCHOTTKY 1.2KV 25A TO247D
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io) (per Diode): 25A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Silicon Carbide Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 50µA @ 1200V

Lieferzeit 21-28 Tag (e)
GB10SLT12-247D |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 12A TO247D
Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Current - Average Rectified (Io) (per Diode): 12A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
auf Bestellung 210 Stücke Description: DIODE SCHOTTKY 1.2KV 12A TO247D
Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Current - Average Rectified (Io) (per Diode): 12A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

Lieferzeit 21-28 Tag (e)
MUR2X030A02 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 30A SOT227
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 30A SOT227
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Bulk
MUR2X030A06 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
MBR2X030A045 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 60A SOT227
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
auf Bestellung 28 Stücke Description: DIODE SCHOTTKY 45V 60A SOT227
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C

Lieferzeit 21-28 Tag (e)
|
MBR2X030A100 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 60A SOT227
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 60A SOT227
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
MBR2X080A100 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 80A SOT227
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 80A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
auf Bestellung 4 Stücke Description: DIODE SCHOTTKY 100V 80A SOT227
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 80A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
|
MUR2X060A04 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 60A SOT227
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
auf Bestellung 38 Stücke Description: DIODE GEN PURP 400V 60A SOT227
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Reverse Recovery Time (trr): 75 ns
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC

Lieferzeit 21-28 Tag (e)
|
MBR2X060A045 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 120A SOT227
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 120A SOT227
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
MBR2X080A045 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 80A SOT227
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 80A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
auf Bestellung 5 Stücke Description: DIODE SCHOTTKY 45V 80A SOT227
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 80A
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C

Lieferzeit 21-28 Tag (e)
|
MUR2X060A02 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 60A SOT227
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 21 Stücke Description: DIODE GEN PURP 200V 60A SOT227
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)

Lieferzeit 21-28 Tag (e)
|
MUR2X060A06 |
![]() |

Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 60A SOT227
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
auf Bestellung 7 Stücke Description: DIODE GEN PURP 600V 60A SOT227
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 60A
Reverse Recovery Time (trr): 90 ns
Diode Configuration: 2 Independent
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
|