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MBRTA50080R MBRTA50080R GeneSiC Semiconductor Description: DIODE SCHOTTKY 80V 250A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 840mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600100 MBRTA600100 GeneSiC Semiconductor Description: DIODE SCHOTTKY 100V 300A 3TOWER
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600100R MBRTA600100R GeneSiC Semiconductor Description: DIODE SCHOTTKY 100V 300A 3TOWER
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600150 MBRTA600150 GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 4mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600150R MBRTA600150R GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 4mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60020 MBRTA60020 GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600200 MBRTA600200 GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 4mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600200R MBRTA600200R GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 4mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60020L MBRTA60020L GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60020R MBRTA60020R GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60020RL MBRTA60020RL GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60030 MBRTA60030 GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60030L MBRTA60030L GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 300A 3TOWER
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 30V
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60030R MBRTA60030R GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 300A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60030RL MBRTA60030RL GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 300A 3TOWER
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60035 MBRTA60035 GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 300A 3TOWER
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60035L MBRTA60035L GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60035R MBRTA60035R GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60035RL MBRTA60035RL GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60040 MBRTA60040 mbrta60020_thru_mbrta60040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60040L MBRTA60040L mbrta60040(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60040R MBRTA60040R mbrta60020_thru_mbrta60040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60040RL MBRTA60040RL mbrta60040(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60045 MBRTA60045 mbrta60045_thru_mbrta600100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60045L MBRTA60045L mbrta60045(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60045R MBRTA60045R mbrta60045_thru_mbrta600100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60045RL MBRTA60045RL mbrta60045(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60060 MBRTA60060 mbrta60045_thru_mbrta600100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 60V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60060R MBRTA60060R mbrta60045_thru_mbrta600100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 60V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60080 MBRTA60080 mbrta60045_thru_mbrta600100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60080R MBRTA60080R mbrta60045_thru_mbrta600100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA800100 MBRTA800100 mbrta80045_thru_mbrta800100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 100V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRTA800100R MBRTA800100R mbrta80045_thru_mbrta800100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 100V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRTA800150 MBRTA800150 mbrta800150_thru_mbrta800200r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRTA800150R MBRTA800150R mbrta800150_thru_mbrta800200r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80020 MBRTA80020 mbrta80020_thru_mbrta80040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRTA800200 MBRTA800200 mbrta800150_thru_mbrta800200r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRTA800200R MBRTA800200R mbrta800150_thru_mbrta800200r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80020L MBRTA80020L mbrta80020(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80020R MBRTA80020R mbrta80020_thru_mbrta80040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80020RL MBRTA80020RL mbrta80020(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80030 MBRTA80030 mbrta80020_thru_mbrta80040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80030L MBRTA80030L mbrta80030(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80030R MBRTA80030R mbrta80020_thru_mbrta80040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80030RL MBRTA80030RL mbrta80030(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80035 MBRTA80035 mbrta80020_thru_mbrta80040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80035L MBRTA80035L mbrta80035(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80035R MBRTA80035R mbrta80020_thru_mbrta80040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80035RL MBRTA80035RL mbrta80035(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80040 MBRTA80040 mbrta80020_thru_mbrta80040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80040L MBRTA80040L mbrta80040(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80040R MBRTA80040R mbrta80020_thru_mbrta80040r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80040RL MBRTA80040RL mbrta80040(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80045 MBRTA80045 mbrta80045_thru_mbrta800100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80045L MBRTA80045L mbrta80045(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80045R MBRTA80045R mbrta80045_thru_mbrta800100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80045RL MBRTA80045RL mbrta80045(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80060 MBRTA80060 mbrta80045_thru_mbrta800100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 60V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 780mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80060R MBRTA80060R mbrta80045_thru_mbrta800100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 60V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 780mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80080 MBRTA80080 mbrta80045_thru_mbrta800100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 80V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80080R MBRTA80080R mbrta80045_thru_mbrta800100r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 80V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30005 GeneSiC Semiconductor Description: DIODE GEN PURP 50V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30005R GeneSiC Semiconductor Description: DIODE GEN PURP 50V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30010 GeneSiC Semiconductor Description: DIODE GEN PURP 100V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF30010R GeneSiC Semiconductor Description: DIODE GEN PURP 100V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF30020 GeneSiC Semiconductor Description: DIODE GEN PURP 200V 150A TO244
Diode Configuration: 1 Pair Common Cathode
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30020R GeneSiC Semiconductor Description: DIODE GEN PURP 200V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF30040 GeneSiC Semiconductor Description: DIODE GEN PURP 400V 150A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF30040R GeneSiC Semiconductor Description: DIODE GEN PURP 400V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30060 GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A TO244
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30060R GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40005 GeneSiC Semiconductor Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40005R GeneSiC Semiconductor Description: DIODE GEN PURP 50V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURF40010 GeneSiC Semiconductor Description: DIODE GEN PURP 100V 200A TO244
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40010R GeneSiC Semiconductor Description: DIODE GEN PURP 100V 200A TO244
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40020 GeneSiC Semiconductor Description: DIODE GEN PURP 200V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40020R GeneSiC Semiconductor Description: DIODE GEN PURP 200V 200A TO244
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40040 GeneSiC Semiconductor Description: DIODE GEN PURP 400V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40040R GeneSiC Semiconductor Description: DIODE GEN PURP 400V 200A TO244
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 400 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40060 GeneSiC Semiconductor Description: DIODE GEN PURP 600V 200A TO244
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 240 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40060R GeneSiC Semiconductor Description: DIODE GEN PURP 600V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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UFT10005 UFT10005 uft10005_thru_uft10060.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 50V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT10010 UFT10010 uft10005_thru_uft10060.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 100V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT10020 UFT10020 uft10005_thru_uft10060.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT10040 UFT10040 uft10005_thru_uft10060.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 70ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT10060 UFT10060 uft10005_thru_uft10060.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT14005 UFT14005 uft14005_thru_uft14060.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 50V 70A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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UFT14010 UFT14010 GeneSiC Semiconductor Description: DIODE GEN PURP 100V 70A TO249AB
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT14040 UFT14040 uft14005_thru_uft14060.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 70A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 85ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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UFT14060 UFT14060 uft14005_thru_uft14060.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 70A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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UFT7340M UFT7340M uft7340m_thru_uft7360m.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 70A D61-3M
Supplier Device Package: D61-3M
Package / Case: D61-3M
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 20µA @ 400V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 35A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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UFT7360M UFT7360M uft7340m_thru_uft7360m.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 70A D61-3M
Supplier Device Package: D61-3M
Package / Case: D61-3M
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 20µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 35A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GB02SHT03-46 GB02SHT03-46 GB02SHT03-46.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 300V 4A
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 188 Stücke
Lieferzeit 21-28 Tag (e)
GB02SHT01-46 GB02SHT01-46 GB02SHT01-46.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 100V 4A
Packaging: Bulk
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
GB02SHT06-46 GB02SHT06-46 GB02SHT06-46.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 600V 4A
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Current - Average Rectified (Io): 4A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Silicon Carbide Schottky
Operating Temperature - Junction: -55°C ~ 225°C
Supplier Device Package: TO-46
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 94 Stücke
Lieferzeit 21-28 Tag (e)
GAP05SLT80-220 GAP05SLT80-220 GAP05SLT80-220.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 8KV 50MA AXIAL
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 4.6V @ 50mA
Current - Average Rectified (Io): 50mA (DC)
Voltage - DC Reverse (Vr) (Max): 8000V (8kV)
Diode Type: Silicon Carbide Schottky
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 3.8µA @ 8000V
Reverse Recovery Time (trr): 0ns
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
GB02SLT12-252 GB02SLT12-252 GB02SLT12-252.pdf GeneSiC Semiconductor Description: DIODE SIC SCHKY 1.2KV 2A TO252
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Current - Average Rectified (Io): 5A (DC)
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
GA10SICP12-263 GA10SICP12-263 GA10SICP12-263.pdf GeneSiC Semiconductor Description: TRANS SJT 1200V 25A D2PAK
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Drain to Source Voltage (Vdss): 1200 V
Part Status: Active
Supplier Device Package: TO-263-7
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA100JT17-227 GA100JT17-227 GA100JT17-227.pdf GeneSiC Semiconductor Description: TRANS SJT 1700V 160A SOT227
Part Status: Obsolete
Supplier Device Package: SOT-227
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Drain to Source Voltage (Vdss): 1700 V
Power Dissipation (Max): 535W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SD41 SD41 sd41_thru_sd4145r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 30A DO4
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 1.5mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA50080R
MBRTA50080R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 250A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 840mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600100
MBRTA600100
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 300A 3TOWER
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600100R
MBRTA600100R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 300A 3TOWER
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600150
MBRTA600150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 4mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600150R
MBRTA600150R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 4mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60020
MBRTA60020
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600200
MBRTA600200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 4mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA600200R
MBRTA600200R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 4mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60020L
MBRTA60020L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60020R
MBRTA60020R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60020RL
MBRTA60020RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 300A 3TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60030
MBRTA60030
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60030L
MBRTA60030L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A 3TOWER
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 30V
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60030R
MBRTA60030R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A 3TOWER
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60030RL
MBRTA60030RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A 3TOWER
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60035
MBRTA60035
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A 3TOWER
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60035L
MBRTA60035L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60035R
MBRTA60035R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60035RL
MBRTA60035RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A 3TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60040 mbrta60020_thru_mbrta60040r.pdf
MBRTA60040
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60040L mbrta60040(r)l.pdf
MBRTA60040L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60040R mbrta60020_thru_mbrta60040r.pdf
MBRTA60040R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60040RL mbrta60040(r)l.pdf
MBRTA60040RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60045 mbrta60045_thru_mbrta600100r.pdf
MBRTA60045
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60045L mbrta60045(r)l.pdf
MBRTA60045L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60045R mbrta60045_thru_mbrta600100r.pdf
MBRTA60045R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60045RL mbrta60045(r)l.pdf
MBRTA60045RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60060 mbrta60045_thru_mbrta600100r.pdf
MBRTA60060
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60060R mbrta60045_thru_mbrta600100r.pdf
MBRTA60060R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60080 mbrta60045_thru_mbrta600100r.pdf
MBRTA60080
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA60080R mbrta60045_thru_mbrta600100r.pdf
MBRTA60080R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 300A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA800100 mbrta80045_thru_mbrta800100r.pdf
MBRTA800100
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA800100R mbrta80045_thru_mbrta800100r.pdf
MBRTA800100R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA800150 mbrta800150_thru_mbrta800200r.pdf
MBRTA800150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA800150R mbrta800150_thru_mbrta800200r.pdf
MBRTA800150R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80020 mbrta80020_thru_mbrta80040r.pdf
MBRTA80020
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA800200 mbrta800150_thru_mbrta800200r.pdf
MBRTA800200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA800200R mbrta800150_thru_mbrta800200r.pdf
MBRTA800200R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80020L mbrta80020(r)l.pdf
MBRTA80020L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80020R mbrta80020_thru_mbrta80040r.pdf
MBRTA80020R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80020RL mbrta80020(r)l.pdf
MBRTA80020RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80030 mbrta80020_thru_mbrta80040r.pdf
MBRTA80030
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80030L mbrta80030(r)l.pdf
MBRTA80030L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80030R mbrta80020_thru_mbrta80040r.pdf
MBRTA80030R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80030RL mbrta80030(r)l.pdf
MBRTA80030RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80035 mbrta80020_thru_mbrta80040r.pdf
MBRTA80035
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80035L mbrta80035(r)l.pdf
MBRTA80035L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80035R mbrta80020_thru_mbrta80040r.pdf
MBRTA80035R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80035RL mbrta80035(r)l.pdf
MBRTA80035RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80040 mbrta80020_thru_mbrta80040r.pdf
MBRTA80040
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80040L mbrta80040(r)l.pdf
MBRTA80040L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80040R mbrta80020_thru_mbrta80040r.pdf
MBRTA80040R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80040RL mbrta80040(r)l.pdf
MBRTA80040RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80045 mbrta80045_thru_mbrta800100r.pdf
MBRTA80045
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80045L mbrta80045(r)l.pdf
MBRTA80045L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80045R mbrta80045_thru_mbrta800100r.pdf
MBRTA80045R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80045RL mbrta80045(r)l.pdf
MBRTA80045RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80060 mbrta80045_thru_mbrta800100r.pdf
MBRTA80060
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 780mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80060R mbrta80045_thru_mbrta800100r.pdf
MBRTA80060R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 780mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80080 mbrta80045_thru_mbrta800100r.pdf
MBRTA80080
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRTA80080R mbrta80045_thru_mbrta800100r.pdf
MBRTA80080R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 400A 3TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Current - Average Rectified (Io) (per Diode): 400A
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30005
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30005R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30010
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30010R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 150A TO244
Diode Configuration: 1 Pair Common Cathode
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30020R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30040
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 150A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30040R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30060
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A TO244
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF30060R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40005
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40005R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40010
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 200A TO244
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40010R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 200A TO244
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40020R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 200A TO244
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40040
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 200A TO244
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40040R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 200A TO244
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40060
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 200A TO244
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 240 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURF40060R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT10005 uft10005_thru_uft10060.pdf
UFT10005
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT10010 uft10005_thru_uft10060.pdf
UFT10010
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT10020 uft10005_thru_uft10060.pdf
UFT10020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 321 Stücke - Preis und Lieferfrist anzeigen
UFT10040 uft10005_thru_uft10060.pdf
UFT10040
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 70ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT10060 uft10005_thru_uft10060.pdf
UFT10060
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 50A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT14005 uft14005_thru_uft14060.pdf
UFT14005
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 50V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT14010
UFT14010
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A TO249AB
Current - Reverse Leakage @ Vr: 25µA @ 100V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT14040 uft14005_thru_uft14060.pdf
UFT14040
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 85ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT14060 uft14005_thru_uft14060.pdf
UFT14060
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT7340M uft7340m_thru_uft7360m.pdf
UFT7340M
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D61-3M
Supplier Device Package: D61-3M
Package / Case: D61-3M
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 20µA @ 400V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 35A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT7360M uft7340m_thru_uft7360m.pdf
UFT7360M
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D61-3M
Supplier Device Package: D61-3M
Package / Case: D61-3M
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 20µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 35A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GB02SHT03-46 GB02SHT03-46.pdf
GB02SHT03-46
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 300V 4A
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
auf Bestellung 188 Stücke
Lieferzeit 21-28 Tag (e)
GB02SHT01-46 GB02SHT01-46.pdf
GB02SHT01-46
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 4A
Packaging: Bulk
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
GB02SHT06-46 GB02SHT06-46.pdf
GB02SHT06-46
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 600V 4A
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Current - Average Rectified (Io): 4A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Silicon Carbide Schottky
Operating Temperature - Junction: -55°C ~ 225°C
Supplier Device Package: TO-46
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
auf Bestellung 94 Stücke
Lieferzeit 21-28 Tag (e)
GAP05SLT80-220 GAP05SLT80-220.pdf
GAP05SLT80-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 8KV 50MA AXIAL
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 4.6V @ 50mA
Current - Average Rectified (Io): 50mA (DC)
Voltage - DC Reverse (Vr) (Max): 8000V (8kV)
Diode Type: Silicon Carbide Schottky
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 3.8µA @ 8000V
Reverse Recovery Time (trr): 0ns
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
GB02SLT12-252 GB02SLT12-252.pdf
GB02SLT12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SIC SCHKY 1.2KV 2A TO252
Manufacturer: GeneSiC Semiconductor
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Current - Average Rectified (Io): 5A (DC)
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8903 Stücke - Preis und Lieferfrist anzeigen
GA10SICP12-263 GA10SICP12-263.pdf
GA10SICP12-263
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A D2PAK
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Drain to Source Voltage (Vdss): 1200 V
Part Status: Active
Supplier Device Package: TO-263-7
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GA100JT17-227 GA100JT17-227.pdf
GA100JT17-227
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 160A SOT227
Part Status: Obsolete
Supplier Device Package: SOT-227
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Drain to Source Voltage (Vdss): 1700 V
Power Dissipation (Max): 535W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
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SD41 sd41_thru_sd4145r.pdf
SD41
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 30A DO4
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 1.5mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
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