GB01SLT06-214 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.64 EUR |
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Technische Details GB01SLT06-214 GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 1A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 76pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AA, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V.
Weitere Produktangebote GB01SLT06-214 nach Preis ab 2.17 EUR bis 3.95 EUR
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GB01SLT06-214 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 1A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V |
auf Bestellung 14855 Stücke: Lieferzeit 10-14 Tag (e) |
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GB01SLT06-214 | Hersteller : GeneSiC Semiconductor | Schottky Diodes & Rectifiers 650V 1A Standard |
auf Bestellung 14581 Stücke: Lieferzeit 14-28 Tag (e) |
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GB01SLT06-214 | Hersteller : GeneSiC Semiconductor | 650V 1A DO-214 SiC Schottky MPS |
Produkt ist nicht verfügbar |
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GB01SLT06-214 | Hersteller : GeneSiC Semiconductor | 650V 1A DO-214 SiC Schottky MPS |
Produkt ist nicht verfügbar |
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GB01SLT06-214 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 7A Anzahl je Verpackung: 15000 Stücke |
Produkt ist nicht verfügbar |
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GB01SLT06-214 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 7A |
Produkt ist nicht verfügbar |