GB01SLT06-214 Navitas Semiconductor, Inc.
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
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Technische Details GB01SLT06-214 Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 650V 1A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 76pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V.
Weitere Produktangebote GB01SLT06-214 nach Preis ab 2.01 EUR bis 5.82 EUR
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GB01SLT06-214 | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 1A Standard |
auf Bestellung 14581 Stücke: Lieferzeit 10-14 Tag (e) |
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GB01SLT06-214 | Navitas Semiconductor, Inc. |
Description: DIODE SIL CARB 650V 1A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V |
auf Bestellung 8171 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GB01SLT06-214 |
|
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 650V 1A Standard
Schottky Diodes & Rectifiers 650V 1A Standard
auf Bestellung 14581 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.19 EUR |
| 10+ | 2.75 EUR |
| 25+ | 2.59 EUR |
| 100+ | 2.37 EUR |
| 250+ | 2.26 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 2.07 EUR |
| GB01SLT06-214 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
auf Bestellung 8171 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.11 EUR |
| 1000+ | 2.01 EUR |