Technische Details GA100JT12-227 GeneSiC Semiconductor
Description: TRANS SJT 1200V 160A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 100A, Power Dissipation (Max): 535W (Tc), Supplier Device Package: SOT-227, Part Status: Obsolete, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V.
Weitere Produktangebote GA100JT12-227
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GA100JT12-227 | Hersteller : GeneSiC Semiconductor |
 GA100JT12-227 |
Produkt ist nicht verfügbar |
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GA100JT12-227 | Hersteller : GeneSiC Semiconductor |
Description: TRANS SJT 1200V 160A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 100A Power Dissipation (Max): 535W (Tc) Supplier Device Package: SOT-227 Part Status: Obsolete Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V |
Produkt ist nicht verfügbar |
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GA100JT12-227 | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 160A Std SiC Junction Transistor |
Produkt ist nicht verfügbar |