GA100JT12-227 GeneSiC Semiconductor

Description: TRANS SJT 1200V 160A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 100A, Power Dissipation (Max): 535W (Tc), Supplier Device Package: SOT-227, Part Status: Obsolete, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V.