Technische Details GA10SICP12-263 GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V, Drain to Source Voltage (Vdss): 1200 V, Part Status: Active, Supplier Device Package: TO-263-7, Power Dissipation (Max): 170W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tube.
Weitere Produktangebote GA10SICP12-263
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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GA10SICP12-263 | GeneSiC Semiconductor |
 Description: TRANS SJT 1200V 25A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V Drain to Source Voltage (Vdss): 1200 V Part Status: Active Supplier Device Package: TO-263-7 Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GA10SICP12-263 |
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Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Drain to Source Voltage (Vdss): 1200 V
Part Status: Active
Supplier Device Package: TO-263-7
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
Description: TRANS SJT 1200V 25A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Drain to Source Voltage (Vdss): 1200 V
Part Status: Active
Supplier Device Package: TO-263-7
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH