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MSRT150100A MSRT150100A GeneSiC Semiconductor Description: DIODE MODULE 1KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150100(A) MSRT150100(A) GeneSiC Semiconductor msrt15060a_thru_msrt150100a.pdf Description: DIODE MODULE 1KV 150A 3TOWER
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MSRT150100(A)D MSRT150100(A)D GeneSiC Semiconductor msrt15060(a)d_thru_msrt150100(a)d.pdf Description: DIODE GEN 1KV 150A 3 TOWER
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MSRT150100(A)D MSRT150100(A)D GeneSiC Semiconductor msrt15060ad_thru_msrt150100ad-1132828.pdf Discrete Semiconductor Modules 1000V 150A Forward
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MSRT150100AD MSRT150100AD GeneSiC Semiconductor Description: DIODE GEN 1KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT150100D MSRT150100D GeneSiC Semiconductor msrt150100d-2452099.pdf Discrete Semiconductor Modules 1000V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT150100D GeneSiC Semiconductor msrt150100d.pdf Description: 1000V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT150120(A)D GeneSiC Semiconductor 266908775065775msrt150120ad_thru_msrt150160ad.pdf Silicon Standard Recovery Diode
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MSRT150120A MSRT150120A GeneSiC Semiconductor Description: DIODE MODULE 1.2KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150120(A) MSRT150120(A) GeneSiC Semiconductor msrt150120a_thru_msrt150160a.pdf Description: DIODE MODULE 1.2KV 150A 3TOWER
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MSRT150120(A)D MSRT150120(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d.pdf Description: DIODE GEN 1.2KV 150A 3 TOWER
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MSRT150120AD MSRT150120AD GeneSiC Semiconductor Description: DIODE GEN 1.2KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT150120(A)D MSRT150120(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d-542013.pdf Discrete Semiconductor Modules 1200V 150A Forward
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MSRT150120D MSRT150120D GeneSiC Semiconductor msrt150120d-2452012.pdf Discrete Semiconductor Modules 1200V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT150120D GeneSiC Semiconductor msrt150120d.pdf Description: 1200V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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MSRT150140A MSRT150140A GeneSiC Semiconductor Description: DIODE MODULE 1.4KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150140(A) MSRT150140(A) GeneSiC Semiconductor msrt150120a_thru_msrt150160a.pdf Description: DIODE MODULE 1.4KV 150A 3TOWER
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MSRT150140(A)D MSRT150140(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d.pdf Description: DIODE GEN 1.4KV 150A 3 TOWER
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MSRT150140(A)D MSRT150140(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d-542013.pdf Discrete Semiconductor Modules 1400V 150A Forward
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MSRT150140AD MSRT150140AD GeneSiC Semiconductor Description: DIODE GEN 1.4KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
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MSRT150140D MSRT150140D GeneSiC Semiconductor msrt150140d-2452015.pdf Discrete Semiconductor Modules 1400V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT150140D GeneSiC Semiconductor msrt150120d.pdf Description: 1400V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
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MSRT150160(A) MSRT150160(A) GeneSiC Semiconductor msrt150120a_thru_msrt150160a.pdf Description: DIODE MODULE 1.6KV 150A 3TOWER
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MSRT150160A MSRT150160A GeneSiC Semiconductor Description: DIODE MODULE 1.6KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150160(A)D MSRT150160(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d-542013.pdf Discrete Semiconductor Modules 1600V 150A Forward
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MSRT150160AD MSRT150160AD GeneSiC Semiconductor Description: DIODE GEN 1.6KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MSRT150160(A)D MSRT150160(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d.pdf Description: DIODE GEN 1.6KV 150A 3 TOWER
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MSRT150160D MSRT150160D GeneSiC Semiconductor msrt150160d-2451888.pdf Discrete Semiconductor Modules 1600V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT150160D GeneSiC Semiconductor msrt150120d.pdf Description: 1600V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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MSRT15060A MSRT15060A GeneSiC Semiconductor Description: DIODE MODULE 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15060(A) MSRT15060(A) GeneSiC Semiconductor Description: DIODE MODULE 600V 150A 3TOWER
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MSRT15060(A)D MSRT15060(A)D GeneSiC Semiconductor msrt150100(a)d.pdf Description: DIODE GEN PURP 600V 150A 3 TOWER
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MSRT15060(A)D MSRT15060(A)D GeneSiC Semiconductor msrt15060ad_thru_msrt150100ad-1132828.pdf Discrete Semiconductor Modules 600V 150A Forward
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MSRT15060AD MSRT15060AD GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT15060D MSRT15060D GeneSiC Semiconductor msrt15060d-2451948.pdf Discrete Semiconductor Modules 600V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT15060D GeneSiC Semiconductor msrt150100d.pdf Description: 600V 150A THREE TOWER SILICON RE
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15080A MSRT15080A GeneSiC Semiconductor Description: DIODE MODULE 800V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT15080(A) MSRT15080(A) GeneSiC Semiconductor msrt15060a_thru_msrt150100a.pdf Description: DIODE MODULE 800V 150A 3TOWER
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MSRT15080(A)D MSRT15080(A)D GeneSiC Semiconductor msrt15060(a)d_thru_msrt150100(a)d.pdf Description: DIODE GEN PURP 800V 150A 3 TOWER
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MSRT15080(A)D MSRT15080(A)D GeneSiC Semiconductor msrt15060ad_thru_msrt150100ad-1132828.pdf Discrete Semiconductor Modules 800V 150A Forward
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MSRT15080AD MSRT15080AD GeneSiC Semiconductor Description: DIODE GEN PURP 800V 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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MSRT15080D GeneSiC Semiconductor msrt150100d.pdf Description: 800V 150A THREE TOWER SILICON RE
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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MSRT15080D MSRT15080D GeneSiC Semiconductor msrt15080d-2451951.pdf Discrete Semiconductor Modules 800V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT200100(A) MSRT200100(A) GeneSiC Semiconductor msrt20060a_thru_msrt200100a.pdf Description: DIODE MODULE 1KV 200A 3TOWER
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MSRT200100A MSRT200100A GeneSiC Semiconductor MSRT20060%7E200100%28A%29.pdf Description: DIODE MOD GP 1000V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT200100(A)D MSRT200100(A)D GeneSiC Semiconductor msrt20060(a)d_thru_msrt200100(a)d.pdf Description: DIODE GEN 1KV 200A 3 TOWER
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MSRT200100AD MSRT200100AD GeneSiC Semiconductor Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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MSRT200100(A)D MSRT200100(A)D GeneSiC Semiconductor msrt20060ad_thru_msrt200100ad-1132254.pdf Discrete Semiconductor Modules 1000V 200A Forward
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MSRT200100D MSRT200100D GeneSiC Semiconductor msrt200160d-2451587.pdf Discrete Semiconductor Modules 1600V 200A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT200120A MSRT200120A GeneSiC Semiconductor Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT200120(A) MSRT200120(A) GeneSiC Semiconductor msrt200120a_thru_msrt200160a.pdf Description: DIODE MODULE 1.2KV 200A 3TOWER
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MSRT200120(A)D MSRT200120(A)D GeneSiC Semiconductor msrt200120ad_thru_msrt200160ad-1132716.pdf Discrete Semiconductor Modules 1200V 200A Forward
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MSRT200120AD MSRT200120AD GeneSiC Semiconductor Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT200120(A)D MSRT200120(A)D GeneSiC Semiconductor msrt200120(a)d_thru_msrt200160(a)d.pdf Description: DIODE GEN 1.2KV 200A 3 TOWER
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MSRT200120D MSRT200120D GeneSiC Semiconductor msrt200120d-2452277.pdf Discrete Semiconductor Modules 1200V 200A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT200140(A) MSRT200140(A) GeneSiC Semiconductor msrt200120a_thru_msrt200160a.pdf Description: DIODE MODULE 1.4KV 200A 3TOWER
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MSRT200140A MSRT200140A GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT200140AD MSRT200140AD GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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MSRT200140(A)D MSRT200140(A)D GeneSiC Semiconductor msrt200120(a)d_thru_msrt200160(a)d.pdf Description: DIODE GEN 1.4KV 200A 3 TOWER
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MSRT200140(A)D MSRT200140(A)D GeneSiC Semiconductor msrt200120ad_thru_msrt200160ad-1132716.pdf Discrete Semiconductor Modules 1400V 200A Forward
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MSRT150100A
MSRT150100A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150100(A) msrt15060a_thru_msrt150100a.pdf
MSRT150100(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 150A 3TOWER
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MSRT150100(A)D msrt15060(a)d_thru_msrt150100(a)d.pdf
MSRT150100(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1KV 150A 3 TOWER
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MSRT150100(A)D msrt15060ad_thru_msrt150100ad-1132828.pdf
MSRT150100(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 150A Forward
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MSRT150100AD
MSRT150100AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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MSRT150100D msrt150100d-2452099.pdf
MSRT150100D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
Produkt ist nicht verfügbar
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MSRT150100D msrt150100d.pdf
Hersteller: GeneSiC Semiconductor
Description: 1000V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT150120(A)D 266908775065775msrt150120ad_thru_msrt150160ad.pdf
Hersteller: GeneSiC Semiconductor
Silicon Standard Recovery Diode
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MSRT150120A
MSRT150120A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150120(A) msrt150120a_thru_msrt150160a.pdf
MSRT150120(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 150A 3TOWER
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MSRT150120(A)D msrt150120(a)d_thru_msrt150160(a)d.pdf
MSRT150120(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 150A 3 TOWER
Produkt ist nicht verfügbar
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MSRT150120AD
MSRT150120AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT150120(A)D msrt150120(a)d_thru_msrt150160(a)d-542013.pdf
MSRT150120(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 150A Forward
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MSRT150120D msrt150120d-2452012.pdf
MSRT150120D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
Produkt ist nicht verfügbar
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MSRT150120D msrt150120d.pdf
Hersteller: GeneSiC Semiconductor
Description: 1200V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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MSRT150140A
MSRT150140A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150140(A) msrt150120a_thru_msrt150160a.pdf
MSRT150140(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 150A 3TOWER
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MSRT150140(A)D msrt150120(a)d_thru_msrt150160(a)d.pdf
MSRT150140(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 150A 3 TOWER
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MSRT150140(A)D msrt150120(a)d_thru_msrt150160(a)d-542013.pdf
MSRT150140(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1400V 150A Forward
Produkt ist nicht verfügbar
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MSRT150140AD
MSRT150140AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
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MSRT150140D msrt150140d-2452015.pdf
MSRT150140D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1400V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
Produkt ist nicht verfügbar
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MSRT150140D msrt150120d.pdf
Hersteller: GeneSiC Semiconductor
Description: 1400V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
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MSRT150160(A) msrt150120a_thru_msrt150160a.pdf
MSRT150160(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.6KV 150A 3TOWER
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MSRT150160A
MSRT150160A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.6KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150160(A)D msrt150120(a)d_thru_msrt150160(a)d-542013.pdf
MSRT150160(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1600V 150A Forward
Produkt ist nicht verfügbar
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MSRT150160AD
MSRT150160AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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MSRT150160(A)D msrt150120(a)d_thru_msrt150160(a)d.pdf
MSRT150160(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 150A 3 TOWER
Produkt ist nicht verfügbar
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MSRT150160D msrt150160d-2451888.pdf
MSRT150160D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1600V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
Produkt ist nicht verfügbar
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MSRT150160D msrt150120d.pdf
Hersteller: GeneSiC Semiconductor
Description: 1600V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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MSRT15060A
MSRT15060A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15060(A)
MSRT15060(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 150A 3TOWER
Produkt ist nicht verfügbar
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MSRT15060(A)D msrt150100(a)d.pdf
MSRT15060(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Produkt ist nicht verfügbar
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MSRT15060(A)D msrt15060ad_thru_msrt150100ad-1132828.pdf
MSRT15060(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 150A Forward
Produkt ist nicht verfügbar
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MSRT15060AD
MSRT15060AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15060D msrt15060d-2451948.pdf
MSRT15060D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
Produkt ist nicht verfügbar
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MSRT15060D msrt150100d.pdf
Hersteller: GeneSiC Semiconductor
Description: 600V 150A THREE TOWER SILICON RE
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15080A
MSRT15080A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 800V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15080(A) msrt15060a_thru_msrt150100a.pdf
MSRT15080(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 800V 150A 3TOWER
Produkt ist nicht verfügbar
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MSRT15080(A)D msrt15060(a)d_thru_msrt150100(a)d.pdf
MSRT15080(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 150A 3 TOWER
Produkt ist nicht verfügbar
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MSRT15080(A)D msrt15060ad_thru_msrt150100ad-1132828.pdf
MSRT15080(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 800V 150A Forward
Produkt ist nicht verfügbar
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MSRT15080AD
MSRT15080AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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MSRT15080D msrt150100d.pdf
Hersteller: GeneSiC Semiconductor
Description: 800V 150A THREE TOWER SILICON RE
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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MSRT15080D msrt15080d-2451951.pdf
MSRT15080D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 800V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
Produkt ist nicht verfügbar
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MSRT200100(A) msrt20060a_thru_msrt200100a.pdf
MSRT200100(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 200A 3TOWER
Produkt ist nicht verfügbar
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MSRT200100A MSRT20060%7E200100%28A%29.pdf
MSRT200100A
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200100(A)D msrt20060(a)d_thru_msrt200100(a)d.pdf
MSRT200100(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1KV 200A 3 TOWER
Produkt ist nicht verfügbar
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MSRT200100AD
MSRT200100AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT200100(A)D msrt20060ad_thru_msrt200100ad-1132254.pdf
MSRT200100(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 200A Forward
Produkt ist nicht verfügbar
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MSRT200100D msrt200160d-2451587.pdf
MSRT200100D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1600V 200A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
Produkt ist nicht verfügbar
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MSRT200120A
MSRT200120A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200120(A) msrt200120a_thru_msrt200160a.pdf
MSRT200120(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 200A 3TOWER
Produkt ist nicht verfügbar
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MSRT200120(A)D msrt200120ad_thru_msrt200160ad-1132716.pdf
MSRT200120(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 200A Forward
Produkt ist nicht verfügbar
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MSRT200120AD
MSRT200120AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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MSRT200120(A)D msrt200120(a)d_thru_msrt200160(a)d.pdf
MSRT200120(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 200A 3 TOWER
Produkt ist nicht verfügbar
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MSRT200120D msrt200120d-2452277.pdf
MSRT200120D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 200A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
Produkt ist nicht verfügbar
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MSRT200140(A) msrt200120a_thru_msrt200160a.pdf
MSRT200140(A)
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 200A 3TOWER
Produkt ist nicht verfügbar
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MSRT200140A
MSRT200140A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200140AD
MSRT200140AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
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MSRT200140(A)D msrt200120(a)d_thru_msrt200160(a)d.pdf
MSRT200140(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 200A 3 TOWER
Produkt ist nicht verfügbar
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MSRT200140(A)D msrt200120ad_thru_msrt200160ad-1132716.pdf
MSRT200140(A)D
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1400V 200A Forward
Produkt ist nicht verfügbar
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