MSRT20060D GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: 600V 200A THREE TOWER SILICON RE
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
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Technische Details MSRT20060D GeneSiC Semiconductor
Description: 600V 200A THREE TOWER SILICON RE, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C.
Weitere Produktangebote MSRT20060D
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MSRT20060D | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 200A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration) |
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