Technische Details MSRT20060(A)D GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MSRT20060(A)D
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MSRT20060AD | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 200A 3TOWER Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
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d_SPL.jpg "MSRT20060(A)D") |
MSRT20060(A)D | Hersteller : GeneSiC Semiconductor |
 Discrete Semiconductor Modules 600V 200A Forward |
Produkt ist nicht verfügbar |